Authors: Ong, DS Li, KF Plimmer, SA Rees, GJ David, JPR Robson, PN

Citation: Ds. Ong et al., Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p(+)-i-n(+) diodes, J APPL PHYS, 87(11), 2000, pp. 7885-7891

Authors: Li, KF Ong, DS David, JPR Tozer, RC Rees, GJ Plimmer, SA Chang, KY Roberts, JS

Citation: Kf. Li et al., Avalanche noise characteristics of thin GaAs structures with distributed carrier generation, IEEE DEVICE, 47(5), 2000, pp. 910-914

Authors: Plimmer, SA David, JPR Ong, DS

Citation: Sa. Plimmer et al., The merits and limitations of local impact ionization theory, IEEE DEVICE, 47(5), 2000, pp. 1080-1088

Authors: Li, KF Ong, DS David, JPR Tozer, RC Rees, GJ Robson, PN Grey, R

Citation: Kf. Li et al., Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors, IEE P-OPTO, 146(1), 1999, pp. 21-24

Authors: Plimmer, SA David, JPR Ong, DS Li, KF

Citation: Sa. Plimmer et al., A simple model for avalanche multiplication including deadspace effects, IEEE DEVICE, 46(4), 1999, pp. 769-775