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Results: 3
Generation-recombination and diffusion currents in HgMnTe n(+)-p junctions
Authors:
Kosyachenko, LA Markov, AV Ostapov, SE Rarenko, IM
Citation:
La. Kosyachenko et al., Generation-recombination and diffusion currents in HgMnTe n(+)-p junctions, SEMICONDUCT, 35(11), 2001, pp. 1270-1278
Special features of generation-recombination processes in the p-n junctions based on HgMnTe
Authors:
Kosyachenko, LA Ostapov, SE Weiguo, S
Citation:
La. Kosyachenko et al., Special features of generation-recombination processes in the p-n junctions based on HgMnTe, SEMICONDUCT, 34(6), 2000, pp. 668-670
Bandgap and intrinsic carrier concentration in HgCdMnTe and HgCdZnTe
Authors:
Bodnaruk, OA Markov, AV Ostapov, SE Rarenko, IM Slonetskii, AF
Citation:
Oa. Bodnaruk et al., Bandgap and intrinsic carrier concentration in HgCdMnTe and HgCdZnTe, SEMICONDUCT, 34(4), 2000, pp. 415-417
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