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Citation: T. Deck et al., Size effect application in the field radiation detectors and Auger-transistors, PHYS LOW-D, 11, 2000, pp. 147-160

Authors: Ostroumova, EV Rogachev, AA

Citation: Ev. Ostroumova et Aa. Rogachev, The Auger transistor based on the Al-SiO2-n-Si heterostructure, APPL SURF S, 166(1-4), 2000, pp. 480-484

Authors: Rogachev, AA Kalganov, VD Mileshkina, NV Ostroumova, EV

Citation: Aa. Rogachev et al., The influence of strong electric field on the interface in the Al-SiO2-n-Si Auger transistor, MICROELEC J, 31(11-12), 2000, pp. 905-911

Authors: Ostroumova, EV Rogachev, AA

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