Authors:
Droopad, R
Yu, Z
Ramdani, J
Hilt, L
Curless, J
Overgaard, C
Edwards, JL
Finder, J
Eisenbeiser, K
Ooms, W
Citation: R. Droopad et al., Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy, MAT SCI E B, 87(3), 2001, pp. 292-296
Authors:
Passlack, M
Yu, Z
Droopad, R
Bowers, B
Overgaard, C
Abrokwah, J
Kummel, AC
Citation: M. Passlack et al., Interface charge and nonradiative carrier recombination in Ga2O3-GaAs interface structures, J VAC SCI B, 17(1), 1999, pp. 49-52