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Results:
1-16
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Results: 16
Authors:
SONG PK
SHIGESATO Y
YASUI I
OWYANG CW
PAINE DC
Citation: Pk. Song et al., STUDY ON CRYSTALLINITY OF TIN-DOPED INDIUM OXIDE-FILMS DEPOSITED BY DC MAGNETRON SPUTTERING, JPN J A P 1, 37(4A), 1998, pp. 1870-1876
Authors:
BAI R
BRIANT CL
PAINE DC
BERESFORD JR
Citation: R. Bai et al., INVESTIGATION OF THE ANNEALING TEXTURE EVOLUTION IN HAFNIUM, Metallurgical and materials transactions. A, Physical metallurgy andmaterials science, 29(3), 1998, pp. 757-764
Authors:
OWYANG CW
SPINNER D
SHIGESATO Y
PAINE DC
Citation: Cw. Owyang et al., A TIME-RESOLVED REFLECTIVITY STUDY OF THE AMORPHOUS-TO-CRYSTALLINE TRANSFORMATION KINETICS IN DC-MAGNETRON SPUTTERED INDIUM TIN OXIDE, Journal of applied physics, 83(1), 1998, pp. 145-154
Authors:
BERESFORD R
PAINE DC
BRIANT CL
Citation: R. Beresford et al., GROUP IVB REFRACTORY-METAL CRYSTALS AS LATTICE-MATCHED SUBSTRATES FORGROWTH OF THE GROUP-III NITRIDES BY PLASMA-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 178(1-2), 1997, pp. 189-200
Authors:
CARAGIANISBROADBRIDGE C
BLASER JM
PAINE DC
Citation: C. Caragianisbroadbridge et al., A CROSS-SECTIONAL ATOMIC-FORCE MICROSCOPY STUDY OF NANOCRYSTALLINE GEPRECIPITATES IN SIO2 FORMED FROM METASTABLE SI1-XGEXO2, Journal of applied physics, 82(4), 1997, pp. 1626-1631
Authors:
PAINE DC
Citation: Dc. Paine, THIN-FILMS AND INTERFACES - MODELING AND CHARACTERIZATION, JOM, 47(3), 1995, pp. 30-30
Authors:
SHIGESATO Y
YASUI I
PAINE DC
Citation: Y. Shigesato et al., ITO THIN-FILM TRANSPARENT CONDUCTORS - MICROSTRUCTURE AND PROCESSING, JOM, 47(3), 1995, pp. 47-50
Authors:
PAINE DC
Citation: Dc. Paine, DEFECTS AND INTERFACES IN ELECTRONIC MATERIALS, JOM, 46(3), 1994, pp. 46-46
Authors:
CARAGIANIS C
SHIGESATO Y
PAINE DC
Citation: C. Caragianis et al., LOW-TEMPERATURE PASSIVATION OF SI1-XGEX ALLOYS BY DRY HIGH-PRESSURE OXIDATION, Journal of electronic materials, 23(9), 1994, pp. 883-888
Authors:
PAINE DC
KIM TY
CARAGIANIS C
SHIGESATO YZ
Citation: Dc. Paine et al., NANOCRYSTALLINE GE SYNTHESIS BY THE CHEMICAL-REDUCTION OF HYDROTHERMALLY GROWN SI0.6GE0.4O2, Journal of electronic materials, 23(9), 1994, pp. 901-906
Authors:
SHIGESATO Y
PAINE DC
Citation: Y. Shigesato et Dc. Paine, A MICROSTRUCTURAL STUDY OF LOW-RESISTIVITY TIN-DOPED INDIUM OXIDE PREPARED BY DC MAGNETRON SPUTTERING, Thin solid films, 238(1), 1994, pp. 44-50
Authors:
SHIGESATO Y
PAINE DC
HAYNES TE
Citation: Y. Shigesato et al., LATTICE-DEFECTS IN O-DOPED INDIUM OXIDE-FILMS( IMPLANTED TIN), JPN J A P 2, 32(9B), 1993, pp. 120001352-120001355
Authors:
SHIGESATO Y
PAINE DC
HAYNES TE
Citation: Y. Shigesato et al., STUDY OF THE EFFECT OF ION-IMPLANTATION ON THE ELECTRICAL AND MICROSTRUCTURAL PROPERTIES OF TIN-DOPED INDIUM OXIDE THIN-FILMS, Journal of applied physics, 73(8), 1993, pp. 3805-3811
Authors:
ZVANUT ME
CARLOS WE
PAINE DC
CARAGIANIS C
Citation: Me. Zvanut et al., ATOMIC-STRUCTURE OF GE-RELATED POINT-DEFECTS IN GE-INCORPORATED OXIDE-FILMS, Applied physics letters, 63(22), 1993, pp. 3049-3051
Authors:
HOWARD DJ
BAILEY WE
PAINE DC
Citation: Dj. Howard et al., OBSERVATION OF OPEN-ENDED STACKING-FAULT TETRAHEDRA IN SI0.85GE0.15 GROWN ON V-GROOVED (001) SI AND PLANAR (11)OVER-BAR1 SI SUBSTRATES, Applied physics letters, 63(21), 1993, pp. 2893-2895
Authors:
PAINE DC
CARAGIANIS C
KIM TY
SHIGESATO Y
ISHAHARA T
Citation: Dc. Paine et al., VISIBLE PHOTOLUMINESCENCE FROM NANOCRYSTALLINE GE FORMED BY H2 REDUCTION OF SI0.6GE0.4O2, Applied physics letters, 62(22), 1993, pp. 2842-2844
Risultati:
1-16
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