ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

ELECTRICAL AND ESR STUDIES OF GAN LAYERS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors: SUCHANEK B PALCZEWSKA M PAKULA K BARANOWSKI J KAMINSKA M

Citation: B. Suchanek et al., ELECTRICAL AND ESR STUDIES OF GAN LAYERS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Acta Physica Polonica. A, 92(5), 1997, pp. 1001-1004

SOME OPTICAL AND EPR PROPERTIES OF STRAIN-FREE GAN CRYSTALS OBTAINED BY AMMONO METHOD

Authors: DWILINSKI R BARANOWSKI JM KAMINSKA M DORADZINSKI R GARCZYNSKI J SIERZPUTOWSKI L PALCZEWSKA M

Citation: R. Dwilinski et al., SOME OPTICAL AND EPR PROPERTIES OF STRAIN-FREE GAN CRYSTALS OBTAINED BY AMMONO METHOD, Acta Physica Polonica. A, 92(4), 1997, pp. 737-741

ELECTRON-SPIN-RESONANCE STUDY OF ISOLATED CR3-PAIRS IN SRLAGAO4 AND SRLAALO4 SINGLE-CRYSTALS( IONS AND CR3+ ION)

Authors: JABLONSKI R PALCZEWSKA M PAJACZKOWSKA A

Citation: R. Jablonski et al., ELECTRON-SPIN-RESONANCE STUDY OF ISOLATED CR3-PAIRS IN SRLAGAO4 AND SRLAALO4 SINGLE-CRYSTALS( IONS AND CR3+ ION), Journal of magnetism and magnetic materials, 167(1-2), 1997, pp. 99-104

INVESTIGATION OF DEEP-LEVEL DEFECTS IN SEMIINSULATING GAAS AND INP BYANALYSIS OF PHOTOINDUCED CURRENT TRANSIENTS

Authors: KAMINSKI P PAWLOWSKI M CWIRKO R PALCZEWSKA M KOZLOWSKI R

Citation: P. Kaminski et al., INVESTIGATION OF DEEP-LEVEL DEFECTS IN SEMIINSULATING GAAS AND INP BYANALYSIS OF PHOTOINDUCED CURRENT TRANSIENTS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 213-216

ROLE OF ARSENIC ANTISITE DEFECT IN NONSTOICHIOMETRIC GALLIUM-ARSENIDE

Authors: JASINSKI J KURPIEWSKI A KORONA K KAMINSKA M PALCZEWSKA M KROTKUS A MARCINKIEVICIUS S LILIENTALWEBER Z TAN HH JAGADISH C

Citation: J. Jasinski et al., ROLE OF ARSENIC ANTISITE DEFECT IN NONSTOICHIOMETRIC GALLIUM-ARSENIDE, Acta Physica Polonica. A, 88(4), 1995, pp. 747-750

NATURE OF DONORS IN SIC

Authors: SUCHANEK B DWILINSKI R KAMINSKA M PALCZEWSKA M VLASKINA S

Citation: B. Suchanek et al., NATURE OF DONORS IN SIC, Acta Physica Polonica. A, 87(2), 1995, pp. 321-324

PHOTO-ESR AND ABSORPTION STUDIES OF ANTISITE DEFECTS IN GAP

Authors: PALCZEWSKA M JASINSKI J KAMINSKA M

Citation: M. Palczewska et al., PHOTO-ESR AND ABSORPTION STUDIES OF ANTISITE DEFECTS IN GAP, Acta Physica Polonica. A, 87(2), 1995, pp. 461-464

ELECTRICAL AND OPTICAL-PROPERTIES OF HIGHLY NONSTOICHIOMETRIC GAAS

Authors: KURPIEWSKI A KORONA K KAMINSKA M PALCZEWSKA M JAGADISH C WILLIAMS J

Citation: A. Kurpiewski et al., ELECTRICAL AND OPTICAL-PROPERTIES OF HIGHLY NONSTOICHIOMETRIC GAAS, Acta Physica Polonica. A, 87(2), 1995, pp. 518-522

ANTISITE DEFECTS CREATED IN NEUTRON-IRRADIATED GAP CRYSTALS

Authors: PALCZEWSKA M JASINSKI J KORONA K KAMINSKA M BOURRET ED ELLIOT AG

Citation: M. Palczewska et al., ANTISITE DEFECTS CREATED IN NEUTRON-IRRADIATED GAP CRYSTALS, Journal of applied physics, 78(6), 1995, pp. 3680-3685

HIGH-RESISTIVITY AND PICOSECOND CARRIER LIFETIME OF GAAS IMPLANTED WITH MEV GA IONS AT HIGH FLUENCES

Authors: JAGADISH C TAN HH JASINSKI J KAMINSKA M PALCZEWSKA M KROTKUS A MARCINKEVICIUS S

Citation: C. Jagadish et al., HIGH-RESISTIVITY AND PICOSECOND CARRIER LIFETIME OF GAAS IMPLANTED WITH MEV GA IONS AT HIGH FLUENCES, Applied physics letters, 67(12), 1995, pp. 1724-1726

ANTISITES DEFECTS IN GAP

Authors: JASINSKI J KAMINSKA M PALCZEWSKA M JURKIEWICZWAGNER E

Citation: J. Jasinski et al., ANTISITES DEFECTS IN GAP, Acta Physica Polonica. A, 84(3), 1993, pp. 579-582

Risultati: 1-11 |