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Citation: Os. Romanyuk et al., STABILIZATION OF THE PHYSICAL-PROPERTIES OF CDXHG1-XSE SOLID-SOLUTIONS DOPED WITH IRON, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 696-699

Authors: PARANCHICH LD ROMANYUK OS MAKOGONENKO VN KURGANETSKII NV

Citation: Ld. Paranchich et al., LOW-VAPOR-PRESSURE AND CONTROLLED-VAPOR-PRESSURE GROWTH OF CDXHG2-XSE(TE) CRYSTALS, Inorganic materials, 33(2), 1997, pp. 156-159

Authors: GEORGITSE EI POSTOLAKI IT PARANCHICH SY PARANCHICH LD SMIRNOV VA

Citation: Ei. Georgitse et al., RADIATIVE RECOMBINATION IN THE NARROW-BAND GAP SOLID-SOLUTIONS N-HG1-XCDXSE, Semiconductors, 30(1), 1996, pp. 99-101

Authors: PARANCHICH SY PARANCHICH LD MAKOGONENKO VN

Citation: Sy. Paranchich et al., KINETIC AND THERMOELECTRIC PROPERTIES OF FEXHG1-XSE ALLOYS, Inorganic materials, 32(3), 1996, pp. 272-275

Authors: PARANCHICH SY PARANCHICH LD MAKOGONENKO VN GAVALESHKO NN KURGANETSKII NV ZUSHMAN IM

Citation: Sy. Paranchich et al., HOMOGENEITY OF CDXHG1-XSE, AND CDXHG1-X-YMNYSE(TE) SOLID-SOLUTIONS GROWN BY THE BRIDGMAN TECHNIQUE, Inorganic materials, 30(6), 1994, pp. 712-715