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Results: 1-25/34
Authors:
BARALDI A
GHEZZI C
MAGNANINI R
PARISINI A
TARRICONE L
ZERBINI S
Citation: A. Baraldi et al., PHOTOIONIZATION CROSS-SECTION OF THE DX CENTER IN TE-DOPED ALXGA1-XSB, Journal of applied physics, 83(1), 1998, pp. 491-496
Authors:
MILANI P
FERRETTI M
PARISINI A
BOTTANI CE
MALVEZZI MA
CAVALLERI A
Citation: P. Milani et al., SYNTHESIS OF CARBON NANO-STRUCTURES AND MESO-STRUCTURES BY LASER-INDUCED COALESCENCE OF FULLERENES, Carbon (New York), 36(5-6), 1998, pp. 495-497
Authors:
MILANI P
BOTTANI CE
PARISINI A
BANFI GP
Citation: P. Milani et al., PHOTOCHEMICAL AND THERMAL EFFECTS IN LASER-IRRADIATED FULLERITE - FROM PERIODIC EXFOLIATION TO CONE FORMATION, Applied physics letters, 72(3), 1998, pp. 293-295
Authors:
BARALDI A
COLONNA F
COVUCCI G
GHEZZI C
MAGNANINI R
PARISINI A
TARRICONE L
BOSACCHI A
FRANCHI S
Citation: A. Baraldi et al., CONTROL OF THE N-TYPE DOPING IN ALXGA1-XSB - DX-CENTER BEHAVIOR OF THE TE IMPURITY, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 70-73
Authors:
GHEZZI C
MAGNANINI R
PARISINI A
ROTELLI B
TARRICONE L
BOSACCHI A
FRANCHI S
Citation: C. Ghezzi et al., CONCENTRATION-DEPENDENCE OF OPTICAL-ABSORPTION IN TELLURIUM-DOPED GASB, Semiconductor science and technology, 12(7), 1997, pp. 858-866
Authors:
ANGELUCCI R
POGGI A
DORI L
CARDINALI GC
PARISINI A
PIZZOCHERO G
TRIFIRO F
CAVANI F
CRITELLI C
BOARINO L
Citation: R. Angelucci et al., POROUS SILICON LAYER PERMEATED WITH SN-V MIXED OXIDES FOR HYDROCARBONSENSOR FABRICATION, Thin solid films, 297(1-2), 1997, pp. 43-47
Authors:
AMATO G
BRUNETTO N
PARISINI A
Citation: G. Amato et al., CHARACTERIZATION OF FREEZE-DRIED POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 73-78
Authors:
PARISINI A
BRUNETTO N
AMATO G
Citation: A. Parisini et al., TEM AND PHOTOLUMINESCENCE CHARACTERIZATION OF POROUS-SILICON LAYERS FROM [111]-ORIENTED P(+) SILICON SUBSTRATES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(10), 1996, pp. 1233-1239
Authors:
BARALDI A
COLONNA F
GHEZZI C
MAGNANINI R
PARISINI A
TARRICONE L
BOSACCHI A
FRANCHI S
Citation: A. Baraldi et al., ELECTRON-MOBILITY AND PHYSICAL MAGNETORESISTANCE IN N-TYPE GASB LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 11(11), 1996, pp. 1656-1667
Authors:
BARALDI A
FRIGERI P
GHEZZI C
PARISINI A
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
Citation: A. Baraldi et al., COEXISTENCE OF THE DX CENTER WITH NONMETASTABLE STATES OF THE DONOR IMPURITY IN SI-DOPED ALXGA1-XAS - EFFECTS ON THE LOW-TEMPERATURE ELECTRON-MOBILITY, Physical review. B, Condensed matter, 53(16), 1996, pp. 10715-10727
Authors:
SOLMI S
PARISINI A
ANGELUCCI R
ARMIGLIATO A
NOBILI D
MORO L
Citation: S. Solmi et al., DOPANT AND CARRIER CONCENTRATION IN SI IN EQUILIBRIUM WITH MONOCLINICSIP PRECIPITATES, Physical review. B, Condensed matter, 53(12), 1996, pp. 7836-7841
Authors:
PARISINI A
MILITA S
SERVIDORI M
Citation: A. Parisini et al., BRAGG-CASE X-RAY INTERFERENCE IN MULTILAYERED STRUCTURES - COMPARISONBETWEEN KINEMATICAL APPROXIMATION AND DYNAMICAL TREATMENT, Acta crystallographica. Section A, Foundations of crystallography, 52, 1996, pp. 302-311
Authors:
AMATO G
BOARINO L
BRUNETTO N
ROSSI AM
PARISINI A
Citation: G. Amato et al., INVESTIGATION OF THE NONRADIATIVE PROCESSES IN POROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 51-54
Authors:
FERRETTI M
PARISINI A
MANFREDINI M
MILANI P
Citation: M. Ferretti et al., LASER-INDUCED GRAPHITIZATION OF FULLERITE, Chemical physics letters, 259(3-4), 1996, pp. 432-437
Authors:
BARALDI A
FRIGERI P
CHEZZI C
PARISINI A
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
Citation: A. Baraldi et al., COEXISTENCE OF THE DX CENTER AND OTHER SI-RELATED ELECTRON BOUND-STATES IN ALXGA1-XAS (VOL 28, PG 412, 1994), Materials science & engineering. B, Solid-state materials for advanced technology, 34(2-3), 1995, pp. 236-236
Authors:
LULLI G
PARISINI A
MATTEI G
Citation: G. Lulli et al., INFLUENCE OF ELECTRON-BEAM PARAMETERS ON THE RADIATION-INDUCED FORMATION OF GRAPHITIC ONIONS, Ultramicroscopy, 60(2), 1995, pp. 187-194
Authors:
HUBIK P
MARES JJ
KRISTOFIK J
BARALDI A
GHEZZI C
PARISINI A
Citation: P. Hubik et al., HALL AND PHOTO-HALL EFFECT MEASUREMENTS ON SULFUR-DOPED GASB, Semiconductor science and technology, 10(4), 1995, pp. 455-462
Authors:
GHEZZI C
MAGNANINI R
PARISINI A
ROTELLI B
TARRICONE L
BOSACCHI A
FRANCHI S
Citation: C. Ghezzi et al., OPTICAL-ABSORPTION NEAR THE FUNDAMENTAL ABSORPTION-EDGE IN GASB, Physical review. B, Condensed matter, 52(3), 1995, pp. 1463-1466
Authors:
PARISINI A
Citation: A. Parisini, THE ACCADEMIA-FILARMONICA-DI-BOLOGNA, 166 6-1800 - STATUTES, MEMBERSHIPS AND EXAMINATION-TRIALS, WITH AN INTRODUCTION CONCERNING THE INSTITUTIONS HISTORY - ITALIAN - CALLEGARI,L, Rivista italiana di musicologia, 30(2), 1995, pp. 504-506
Authors:
PARISINI A
Citation: A. Parisini, TORREFRANCA,FAUSTO - THE MAN, HIS ERA, HI S OEUVRE - PROCEEDINGS OF THE INTERNATIONAL-CONFERENCE HELD IN VIBO-VALENTIA, DECEMBER 15-17, 1983 - ITALIAN - FERRARO,G, PUGLIESE,A, Rivista italiana di musicologia, 30(2), 1995, pp. 542-545
Authors:
PARISINI A
Citation: A. Parisini, PIANO-RECITAL - ITALIAN - RATTALINO,P, Nuova rivista musicale italiana, 29(4), 1995, pp. 745-747
Authors:
BOSACCHI A
FRANCHI S
ALLEGRI P
AVANZINI V
BARALDI A
GHEZZI C
MAGNANINI R
PARISINI A
TARRICONE L
Citation: A. Bosacchi et al., ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF UNDOPED GASB PREPARED BY MOLECULAR-BEAM EPITAXY AND ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 844-848
Authors:
NOBILI D
SOLMI S
PARISINI A
ARMIGLIATO A
MORO L
Citation: D. Nobili et al., RECENT FINDINGS IN SILICON DOPING WITH PHOSPHORUS, Renewable energy, 5(1-4), 1994, pp. 250-251
Authors:
BARALDI A
GHEZZI C
MAGNANINI R
PARISINI A
TARRICONE L
BOSACCHI A
FRANCHI S
AVANZINI V
ALLEGRI P
Citation: A. Baraldi et al., PREPARATION OF GASB BY MOLECULAR-BEAM EPITAXY AND ELECTRICAL AND PHOTOLUMINESCENCE CHARACTERIZATION, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 174-178
Authors:
BARALDI A
FRIGERI P
GHEZZI C
PARISINI A
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
Citation: A. Baraldi et al., COEXISTENCE OF THE DX CENTER AND OTHER SI-RELATED ELECTRON BOUND-STATES IN ALXGA1-XAS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 412-415