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Results: 1-25/35
Authors:
PARK DG
KIM SS
AHN BG
HONG JH
KIM CG
KIM HC
KIM IS
Citation: Dg. Park et al., THE CHANGE OF BARKHAUSEN NOISE DUE TO THERMAL AGING IN INCONEL-600, Journal de physique. IV, 8(P2), 1998, pp. 797-800
Authors:
PARK DG
HIGUCHI M
DIECKMANN R
BURLITCH JM
Citation: Dg. Park et al., THE SYNTHESIS OF VANADIUM-DOPED FORSTERITE BY THE H2O2-ASSISTED SOL-GEL METHOD, AND THE GROWTH OF SINGLE-CRYSTALS OF VANADIUM-DOPED FORSTERITE BY THE FLOATING-ZONE METHOD, Bulletin of the Korean Chemical Society, 19(9), 1998, pp. 927-933
Authors:
KANG J
PARK SH
KWON HY
PARK DG
KIM SS
KWEON HJ
NAM SS
Citation: J. Kang et al., SYNTHESIS OF MACHINABLE OPTICAL MONOLITH OF FORSTERITE-PMMA ORGANIC-INORGANIC NANOCOMPOSITE THROUGH A NEW SYNTHETIC STRATEGY, Bulletin of the Korean Chemical Society, 19(5), 1998, pp. 503-506
Authors:
PARK DG
PARK SH
LEE HH
CHO HG
Citation: Dg. Park et al., AN AUTOMATIC CROWD GENERATION SYSTEM USING IMAGE-PROCESSING TECHNIQUES, Computer networks and ISDN systems, 30(20-21), 1998, pp. 2015-2023
Authors:
PARK DG
HONG JH
OK CI
KIM JW
KIM HC
Citation: Dg. Park et al., CHANGES IN MAGNETIC-PROPERTIES OF NEUTRON-IRRADIATED RPV STEEL, IEEE transactions on magnetics, 34(4), 1998, pp. 2036-2038
Authors:
PARK DG
MOHAMMAD SN
CHEN Z
MORKOC H
Citation: Dg. Park et al., METAL-INSULATOR-SEMICONDUCTOR STRUCTURE ON GAAS USING A PSEUDOMORPHICSI GAP INTERLAYER/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 252-258
Authors:
PARK DG
CHEN Z
MORKOC H
Citation: Dg. Park et al., CHARACTERISTICS OF SI3N4 GAAS METAL-INSULATOR-SEMICONDUCTOR INTERFACES WITH COHERENT SI/AL0.3GA0.7AS INTERLAYERS/, Journal of electronic materials, 26(9), 1997, pp. 1076-1082
Authors:
KIM HJ
KANG J
PARK DG
KWEON HJ
KLABUNDE KJ
Citation: Hj. Kim et al., EFFECT OF CORE MORPHOLOGY ON THE DECOMPOSITION OF CCL4 OVER THE SURFACE OF CORE SHELL STRUCTURED FE2O3/MGO COMPOSITE METAL-OXIDES/, Bulletin of the Korean Chemical Society, 18(8), 1997, pp. 831-840
Authors:
KWEON HJ
PARK DG
KUK ST
PARK HB
KIM K
Citation: Hj. Kweon et al., SYNTHESIS OF LA1-XSRXCOO3 (X-LESS-THAN-OR-EQUAL-TO-0.2) AT LOW-TEMPERATURE FROM PVA-POLYMERIC GEL PRECURSORS, Bulletin of the Korean Chemical Society, 18(12), 1997, pp. 1249-1256
Authors:
PARK DG
HONG JH
KIM IS
KIM HC
Citation: Dg. Park et al., EVALUATION OF THERMAL RECOVERY OF NEUTRON-IRRADIATED SA508-3 STEEL USING MAGNETIC PROPERTY MEASUREMENTS, Journal of Materials Science, 32(23), 1997, pp. 6141-6146
Authors:
CHEN Z
MOHAMMAD SN
PARK DG
DIATEZUA DM
MORKOC H
CHANG YC
Citation: Z. Chen et al., BAND-STRUCTURE AND CONFINED ENERGY-LEVELS OF THE SI3N4 SI/GAAS SYSTEM/, Journal of applied physics, 82(1), 1997, pp. 275-280
Authors:
PARK DG
KIM CG
KIM HC
HONG JH
KIM IS
Citation: Dg. Park et al., EFFECT OF NEUTRON-IRRADIATION ON MAGNETIC-PROPERTIES IN THE LOW-ALLOYNI-MO STEEL SA508-3, Journal of applied physics, 81(8), 1997, pp. 4125-4127
Authors:
PARK DG
LI D
TAO M
FAN ZF
BOTCHKAREV AE
MOHAMMAD SN
MORKOC H
Citation: Dg. Park et al., SI3N4 SI/IN0.05GA0.95AS/N-GAAS METAL-INSULATOR-SEMICONDUCTOR DEVICES/, Journal of applied physics, 81(1), 1997, pp. 516-523
Authors:
PARK DG
REED JC
MORKOC H
Citation: Dg. Park et al., MINORITY-CARRIER CHARACTERISTICS OF SINX GAAS METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH SI/GE INTERLAYERS/, Applied physics letters, 71(9), 1997, pp. 1210-1212
Authors:
CHEN Z
MOHAMMAD SN
PARK DG
MORKOC H
CHANG YC
Citation: Z. Chen et al., ON THE INVERSION IN GAAS METAL-INSULATOR-SEMICONDUCTOR HETEROSTRUCTURES, Applied physics letters, 70(2), 1997, pp. 228-230
Authors:
PARK DG
CHEN Z
DIATEZUA DM
WANG Z
ROCKETT A
MORKOC H
ALTEROVITZ SA
Citation: Dg. Park et al., THERMAL-STABILITY OF SI3N4 SI GAAS INTERFACES, Applied physics letters, 70(10), 1997, pp. 1263-1265
Authors:
PARK DG
CHEN Z
BOTCHKAREV AE
MOHAMMAD SN
MORKOC H
Citation: Dg. Park et al., INTERFACE PROPERTIES OF SI3N4 SI/N-GAAS METAL-INSULATOR-SEMICONDUCTORSTRUCTURE USING A SI INTERLAYER/, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 74(3), 1996, pp. 219-234
Authors:
MOHAMMAD SN
TAO M
PARK DG
BOTCHKAREV AE
LI D
MORKOC H
Citation: Sn. Mohammad et al., COMPOSITION AND CONDUCTION PROPERTIES OF SILICON NITRIDES DEPOSITED BY PLASMA-ENHANCED ULTRA-HIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(5), 1996, pp. 817-831
Authors:
PARK DG
TAO M
LI D
BOTCHKAREV AE
FAN Z
WANG Z
MOHAMMAD SN
ROCKETT A
ABELSON JR
MORKOC H
HEYD AR
ALTEROVITZ SA
Citation: Dg. Park et al., GATE QUALITY SI3N4 PREPARED BY LOW-TEMPERATURE REMOTE PLASMA-ENHANCEDCHEMICAL-VAPOR-DEPOSITION FOR III-V SEMICONDUCTOR-BASED METAL-INSULATOR-SEMICONDUCTOR DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2674-2683
Authors:
PARK DG
BURLITCH JM
Citation: Dg. Park et Jm. Burlitch, ELECTRO-SPRAY SYNTHESIS OF TITANIUM-OXIDE NANO-PARTICLES, JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 6(3), 1996, pp. 235-249
Authors:
STARK JV
PARK DG
LAGADIC I
KLABUNDE KJ
Citation: Jv. Stark et al., NANOSCALE METAL-OXIDE PARTICLES CLUSTERS AS CHEMICAL REAGENTS - UNIQUE SURFACE-CHEMISTRY ON MAGNESIUM-OXIDE AS SHOWN BY ENHANCED ADSORPTIONOF ACID GASES (SULFUR-DIOXIDE AND CARBON-DIOXIDE) AND PRESSURE-DEPENDENCE/, Chemistry of materials, 8(8), 1996, pp. 1904-1912
Authors:
KWEON HJ
KUK ST
PARK HB
PARK DG
KIM K
Citation: Hj. Kweon et al., SYNTHESIS OF LA0.8SR0.2COO3 BY SOL-GEL TYPE REACTION MODIFIED BY POLY(VINYL ALCOHOL), Journal of materials science letters, 15(5), 1996, pp. 428-430
Authors:
KLABUNDE KJ
STARK J
KOPER O
MOHS C
PARK DG
DECKER S
JIANG Y
LAGADIC I
ZHANG DJ
Citation: Kj. Klabunde et al., NANOCRYSTALS AS STOICHIOMETRIC REAGENTS WITH UNIQUE SURFACE-CHEMISTRY, Journal of physical chemistry, 100(30), 1996, pp. 12142-12153
Authors:
PARK DG
SOHN DW
KIM HS
OH BH
PARK YB
SEO JD
Citation: Dg. Park et al., MYOCARDIAL VELOCITY-GRADIENT DURING LOW-DOSE DOBUTAMINE STRESS ECHOCARDIOGRAPHY IN THE PREDICTION OF VIABLE MYOCARDIUM IN THE INFARCT ZONE, Circulation, 94(8), 1996, pp. 2621-2621
Authors:
PARK DG
DIATEZUA DM
CHEN Z
MOHAMMAD SN
MORKOC H
Citation: Dg. Park et al., CHARACTERISTICS OF SI3N4 SI/N-GAAS METAL-INSULATOR-SEMICONDUCTOR INTERFACES GROWN ON GAAS(111)B SUBSTRATE/, Applied physics letters, 69(20), 1996, pp. 3025-3027