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Results: 1-9 |
Results: 9
MULTISTEP PROCESS-CONTROL AND CHARACTERIZATION OF SCANNING PROBE LITHOGRAPHY
Authors: PETERSON CA RUSKELL TG PYLE JL WORKMAN RK YAO X HUNT JP SARID D PARKS HG VERMEIRE B
Citation: Ca. Peterson et al., MULTISTEP PROCESS-CONTROL AND CHARACTERIZATION OF SCANNING PROBE LITHOGRAPHY, Applied physics A: Materials science & processing, 66, 1998, pp. 729-733
THE EFFECT OF COPPER CONTAMINATION ON FIELD OVERLAP EDGES AND PERIMETER JUNCTION LEAKAGE CURRENT
Authors: VERMEIRE B LEE L PARKS HG
Citation: B. Vermeire et al., THE EFFECT OF COPPER CONTAMINATION ON FIELD OVERLAP EDGES AND PERIMETER JUNCTION LEAKAGE CURRENT, IEEE transactions on semiconductor manufacturing, 11(2), 1998, pp. 232-238
A COMPARATIVE ELECTRCHEMICAL STUDY OF COPPER DEPOSITION ONTO SILICON FROM DILUTE AND BUFFERED HYDROFLUORIC ACIDS
Authors: LI G KNEER EA VERMEIRE B PARKS HG RAGHAVAN S JEON JS
Citation: G. Li et al., A COMPARATIVE ELECTRCHEMICAL STUDY OF COPPER DEPOSITION ONTO SILICON FROM DILUTE AND BUFFERED HYDROFLUORIC ACIDS, Journal of the Electrochemical Society, 145(1), 1998, pp. 241-246
ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY OF COPPER DEPOSITION ON SILICON FROM DILUTE HYDROFLUORIC-ACID SOLUTIONS
Authors: CHENG X LI G KNEER EA VERMEIRE B PARKS HG RAGHAVAN S JEON JS
Citation: X. Cheng et al., ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY OF COPPER DEPOSITION ON SILICON FROM DILUTE HYDROFLUORIC-ACID SOLUTIONS, Journal of the Electrochemical Society, 145(1), 1998, pp. 352-357
INTERPRETATION OF EXPERIMENTALLY OBSERVED C-T RESPONSES FOR COPPER CONTAMINATED DEVICES
Authors: LEE L PARKS HG SCHRIMPF RD
Citation: L. Lee et al., INTERPRETATION OF EXPERIMENTALLY OBSERVED C-T RESPONSES FOR COPPER CONTAMINATED DEVICES, Solid-state electronics, 39(3), 1996, pp. 369-375
ELECTROCHEMICAL INVESTIGATION OF COPPER CONTAMINATION ON SILICON-WAFERS FROM HF SOLUTIONS
Authors: JEON JS RAGHAVAN S PARKS HG LOWELL JK ALI I
Citation: Js. Jeon et al., ELECTROCHEMICAL INVESTIGATION OF COPPER CONTAMINATION ON SILICON-WAFERS FROM HF SOLUTIONS, Journal of the Electrochemical Society, 143(9), 1996, pp. 2870-2875
DEPOSITION OF COPPER FROM A BUFFERED OXIDE ETCHANT ONTO SILICON-WAFERS
Authors: YONESHIGE KK PARKS HG RAGHAVAN S HISKEY JB RESNICK PJ
Citation: Kk. Yoneshige et al., DEPOSITION OF COPPER FROM A BUFFERED OXIDE ETCHANT ONTO SILICON-WAFERS, Journal of the Electrochemical Society, 142(2), 1995, pp. 671-676
QUANTIFYING THE IMPACT OF HOMOGENEOUS METAL CONTAMINATION USING TEST STRUCTURE METROLOGY AND DEVICE MODELING
Authors: PARKS HG SCHRIMPF RD CRAIGIN B JONES R RESNICK P
Citation: Hg. Parks et al., QUANTIFYING THE IMPACT OF HOMOGENEOUS METAL CONTAMINATION USING TEST STRUCTURE METROLOGY AND DEVICE MODELING, IEEE transactions on semiconductor manufacturing, 7(3), 1994, pp. 249-258
RESEARCH ACCOMPLISHMENTS AT THE UNIVERSITY-OF-ARIZONA SEMATECH CENTEROF EXCELLENCE FOR CONTAMINATION DEFECT ASSESSMENT AND CONTROL
Authors: PARKS HG OHANLON JF
Citation: Hg. Parks et Jf. Ohanlon, RESEARCH ACCOMPLISHMENTS AT THE UNIVERSITY-OF-ARIZONA SEMATECH CENTEROF EXCELLENCE FOR CONTAMINATION DEFECT ASSESSMENT AND CONTROL, IEEE transactions on semiconductor manufacturing, 6(2), 1993, pp. 134-142
Risultati: 1-9 |