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Results: 1-22 |
Results: 22
ESTIMATING COVERAGE OF RADIO TRANSMISSION INTO AND WITHIN BUILDINGS AT 900, 1800, AND 2300 MHZ
Authors: DETOLEDO AF TURKMANI AMD PARSONS JD
Citation: Af. Detoledo et al., ESTIMATING COVERAGE OF RADIO TRANSMISSION INTO AND WITHIN BUILDINGS AT 900, 1800, AND 2300 MHZ, IEEE personal communications, 5(2), 1998, pp. 40-47
SIMILARITY OF GRAVITY CURRENT FRONTS
Authors: PARSONS JD GARCIA MH
Citation: Jd. Parsons et Mh. Garcia, SIMILARITY OF GRAVITY CURRENT FRONTS, Physics of fluids (1994), 10(12), 1998, pp. 3209-3213
LANE TRACKING SOFTWARE FOR 4-COLOR FLUORESCENCE-BASED ELECTROPHORETICGEL IMAGES
Authors: COOPER ML MAFFITT DR PARSONS JD HILLIER L STATES DJ
Citation: Ml. Cooper et al., LANE TRACKING SOFTWARE FOR 4-COLOR FLUORESCENCE-BASED ELECTROPHORETICGEL IMAGES, PCR methods and applications, 6(11), 1996, pp. 1110-1117
A STATISTICAL REPRESENTATION OF WIND EVENTS IN THE GREAT-LAKES
Authors: PARSONS JD LESHT BM
Citation: Jd. Parsons et Bm. Lesht, A STATISTICAL REPRESENTATION OF WIND EVENTS IN THE GREAT-LAKES, Journal of Great Lakes research, 22(3), 1996, pp. 789-794
MIXING AT THE FRONT OF GRAVITY CURRENTS
Authors: GARCIA MH PARSONS JD
Citation: Mh. Garcia et Jd. Parsons, MIXING AT THE FRONT OF GRAVITY CURRENTS, Dynamics of atmospheres and oceans, 24(1-4), 1996, pp. 197-205
THE PREDICTION OF BER PERFORMANCE IN THE GSM RADIO SYSTEM
Authors: CHUNG YH PARSONS JD TURKMANI AMD
Citation: Yh. Chung et al., THE PREDICTION OF BER PERFORMANCE IN THE GSM RADIO SYSTEM, IEEE transactions on communications, 44(9), 1996, pp. 1064-1069
IMPROVED TOOLS FOR DNA COMPARISON AND CLUSTERING
Authors: PARSONS JD
Citation: Jd. Parsons, IMPROVED TOOLS FOR DNA COMPARISON AND CLUSTERING, Computer applications in the biosciences, 11(6), 1995, pp. 603-613
MIROPEATS - GRAPHICAL DNA-SEQUENCE COMPARISONS
Authors: PARSONS JD
Citation: Jd. Parsons, MIROPEATS - GRAPHICAL DNA-SEQUENCE COMPARISONS, Computer applications in the biosciences, 11(6), 1995, pp. 615-619
SINGLE-CRYSTAL TITANIUM CARBIDE, EPITAXIALLY GROWN ON ZINCBLEND AND WURTZITE STRUCTURES OF SILICON-CARBIDE
Authors: ZHAO QH PARSONS JD CHEN HS CHADDHA AK WU J KRUAVAL GB DOWNHAM D
Citation: Qh. Zhao et al., SINGLE-CRYSTAL TITANIUM CARBIDE, EPITAXIALLY GROWN ON ZINCBLEND AND WURTZITE STRUCTURES OF SILICON-CARBIDE, Materials research bulletin, 30(6), 1995, pp. 761-769
SULFUR-HEXAFLUORIDE REACTIVE ION ETCHING OF (111) BETA-SIC EPITAXIAL LAYERS, GROWN ON (111) TIC SUBSTRATES
Authors: WU J PARSONS JD EVANS DR
Citation: J. Wu et al., SULFUR-HEXAFLUORIDE REACTIVE ION ETCHING OF (111) BETA-SIC EPITAXIAL LAYERS, GROWN ON (111) TIC SUBSTRATES, Journal of the Electrochemical Society, 142(2), 1995, pp. 669-671
THERMALLY STABLE, LOW SPECIFIC RESISTANCE (1.30X10(-5)OMEGA-CM(2)) TIC OHMIC CONTACTS TO N-TYPE 6H-ALPHA-SIC
Authors: CHADDHA AK PARSONS JD KRUAVAL GB
Citation: Ak. Chaddha et al., THERMALLY STABLE, LOW SPECIFIC RESISTANCE (1.30X10(-5)OMEGA-CM(2)) TIC OHMIC CONTACTS TO N-TYPE 6H-ALPHA-SIC, Applied physics letters, 66(6), 1995, pp. 760-762
DEFECT STRUCTURE IN SINGLE-CRYSTAL TITANIUM CARBIDE
Authors: ZHAO QH WU J CHADDHA AK CHEN HS PARSONS JD DOWNHAM D
Citation: Qh. Zhao et al., DEFECT STRUCTURE IN SINGLE-CRYSTAL TITANIUM CARBIDE, Journal of materials research, 9(8), 1994, pp. 2096-2101
ELECTRICAL CHARACTERIZATION OF HG1-XCDXTE ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.58) GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: HAHN SR PARSONS JD ELLSWORTH JA VYDYANATH HR
Citation: Sr. Hahn et al., ELECTRICAL CHARACTERIZATION OF HG1-XCDXTE ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.58) GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of applied physics, 76(1), 1994, pp. 385-389
MORPHOLOGICAL STRUCTURE OF SILICON-CARBIDE GROWN BY CHEMICAL-VAPOR-DEPOSITION ON TITANIUM CARBIDE USING SILANE AND ETHYLENE
Authors: KRUAVAL GB PARSONS JD
Citation: Gb. Kruaval et Jd. Parsons, MORPHOLOGICAL STRUCTURE OF SILICON-CARBIDE GROWN BY CHEMICAL-VAPOR-DEPOSITION ON TITANIUM CARBIDE USING SILANE AND ETHYLENE, Journal of the Electrochemical Society, 141(3), 1994, pp. 765-771
MORPHOLOGICAL STRUCTURE OF SILICON-CARBIDE, CHEMICALLY VAPOR-DEPOSITED ON TITANIUM CARBIDE, USING ETHYLENE, CARBON-TETRACHLORIDE, AND SILICON TETRACHLORIDE
Authors: PARSONS JD KRUAVAL GB
Citation: Jd. Parsons et Gb. Kruaval, MORPHOLOGICAL STRUCTURE OF SILICON-CARBIDE, CHEMICALLY VAPOR-DEPOSITED ON TITANIUM CARBIDE, USING ETHYLENE, CARBON-TETRACHLORIDE, AND SILICON TETRACHLORIDE, Journal of the Electrochemical Society, 141(3), 1994, pp. 771-777
REACTIVE ION ETCHING OF (111) BETA-SIC EPITAXIAL LAYERS ON (111) TIC SUBSTRATES IN CF4+O2+AR
Authors: WU J PARSONS JD EVANS DR
Citation: J. Wu et al., REACTIVE ION ETCHING OF (111) BETA-SIC EPITAXIAL LAYERS ON (111) TIC SUBSTRATES IN CF4+O2+AR, Journal of the Electrochemical Society, 141(10), 1994, pp. 2915-2917
CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS, FABRICATED ON (111) BETA-SIC EPILAYERS GROWN ON (111) TIC
Authors: CHEN HS PARSONS JD
Citation: Hs. Chen et Jd. Parsons, CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS, FABRICATED ON (111) BETA-SIC EPILAYERS GROWN ON (111) TIC, Applied physics letters, 65(20), 1994, pp. 2576-2578
LOW SPECIFIC RESISTANCE (LESS-THAN-6X10(-6) OMEGA-CM(2)) TIC OHMIC CONTACTS TO N-TYPE BETA-SIC
Authors: PARSONS JD KRUAVAL GB CHADDHA AK
Citation: Jd. Parsons et al., LOW SPECIFIC RESISTANCE (LESS-THAN-6X10(-6) OMEGA-CM(2)) TIC OHMIC CONTACTS TO N-TYPE BETA-SIC, Applied physics letters, 65(16), 1994, pp. 2075-2077
DIRECT GROWTH OF HG1-XCDXTE ALLOYS IN A COLD-WALL, ANNULAR REACTANT INLET INVERTED-VERTICAL ORGANOMETALLIC VAPOR-PHASE EPITAXY REACTOR AT 300-DEGREES-C
Authors: HAHN SR PARSONS JD
Citation: Sr. Hahn et Jd. Parsons, DIRECT GROWTH OF HG1-XCDXTE ALLOYS IN A COLD-WALL, ANNULAR REACTANT INLET INVERTED-VERTICAL ORGANOMETALLIC VAPOR-PHASE EPITAXY REACTOR AT 300-DEGREES-C, Journal of crystal growth, 134(1-2), 1993, pp. 90-96
EPITAXIAL-GROWTH OF BETA-SIC ON TICX BY REACTIVE EVAPORATION
Authors: PARSONS JD BUNSHAH RF STAFSUDD OM
Citation: Jd. Parsons et al., EPITAXIAL-GROWTH OF BETA-SIC ON TICX BY REACTIVE EVAPORATION, Journal of the Electrochemical Society, 140(6), 1993, pp. 1756-1762
GROWTH OF UNDOPED INDIUM-PHOSPHIDE BY OMVPE IN AN INVERTED-VERTICAL REACTOR USING TRIMETHYLINDIUM AND TERTIARYBUTYLPHOSPHINE AND PHOSPHINE
Authors: PARSONS JD OATIS K WU J CHADDHA AK HAHN SR CHEN HS WILD S DENG C PLANT T MARLIA J
Citation: Jd. Parsons et al., GROWTH OF UNDOPED INDIUM-PHOSPHIDE BY OMVPE IN AN INVERTED-VERTICAL REACTOR USING TRIMETHYLINDIUM AND TERTIARYBUTYLPHOSPHINE AND PHOSPHINE, Journal of the Electrochemical Society, 140(11), 1993, pp. 3280-3283
CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS ON TITANIUM CARBIDE, USING 1,3 DISILACYCLOBUTANE
Authors: CHADDHA AK PARSONS JD WU J CHEN HS ROBERTS DA HOCKENHULL H
Citation: Ak. Chaddha et al., CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS ON TITANIUM CARBIDE, USING 1,3 DISILACYCLOBUTANE, Applied physics letters, 62(24), 1993, pp. 3097-3098
Risultati: 1-22 |