AAAAAA

   
Results: 1-17 |
Results: 17
MBE P-ON-N HG1-XCDXTE HETEROSTRUCTURE DETECTORS ON SILICON SUBSTRATES
Authors: WIJEWARNASURIYA PS ZANDIAN M EDWALL DD MCLEVIGE WV CHEN CA PASKO JG HILDEBRANDT G CHEN AC ARIAS JM DSOUZA AI RUJIRAWAT S SIVANATHAN S
Citation: Ps. Wijewarnasuriya et al., MBE P-ON-N HG1-XCDXTE HETEROSTRUCTURE DETECTORS ON SILICON SUBSTRATES, Journal of electronic materials, 27(6), 1998, pp. 546-549
MEASUREMENT OF MINORITY-CARRIER LIFETIME IN N-TYPE MBE HGCDTE AND ITSDEPENDENCE ON ANNEALING
Authors: EDWALL DD DEWAMES RE MCLEVIGE WV PASKO JG ARIAS JM
Citation: Dd. Edwall et al., MEASUREMENT OF MINORITY-CARRIER LIFETIME IN N-TYPE MBE HGCDTE AND ITSDEPENDENCE ON ANNEALING, Journal of electronic materials, 27(6), 1998, pp. 698-702
DARK CURRENT GENERATING MECHANISMS IN SHORT-WAVELENGTH INFRARED PHOTOVOLTAIC DETECTORS
Authors: DEWAMES RE EDWALL DD ZANDIAN M BUBULAC LO PASKO JG TENNANT WE ARIAS JM DSOUZA A
Citation: Re. Dewames et al., DARK CURRENT GENERATING MECHANISMS IN SHORT-WAVELENGTH INFRARED PHOTOVOLTAIC DETECTORS, Journal of electronic materials, 27(6), 1998, pp. 722-726
HIGH-PERFORMANCE SWIR HGCDTE DETECTOR ARRAYS
Authors: BUBULAC LO TENNANT WE PASKO JG KOZLOWSKI LJ ZANDIAN M MOTAMEDI ME DEWAMES RE BAJAJ J NAYAR N MCLEVIGE WV GLUCK NS MELENDES R COOPER DE EDWALL DD ARIAS JM HALL R DSOUZA AI
Citation: Lo. Bubulac et al., HIGH-PERFORMANCE SWIR HGCDTE DETECTOR ARRAYS, Journal of electronic materials, 26(6), 1997, pp. 649-655
VSWIR TO VLWIR MBE GROWN HGCDTE MATERIAL AND DETECTORS FOR REMOTE-SENSING APPLICATIONS
Authors: DSOUZA AI DAWSON LC ANDERSON EJ MARKUM AD TENNANT WE BUBULAC LO ZANDIAN M PASKO JG MCLEVIGE WV EDWALL DD DERR JW JANDIK JE
Citation: Ai. Dsouza et al., VSWIR TO VLWIR MBE GROWN HGCDTE MATERIAL AND DETECTORS FOR REMOTE-SENSING APPLICATIONS, Journal of electronic materials, 26(6), 1997, pp. 656-661
MICROOPTIC INTEGRATION WITH FOCAL-PLANE ARRAYS
Authors: MOTAMEDI ME TENNANT WE SANKUR HO MELENDES R GLUCK NS PARK S ARIAS JM BAJAJ J PASKO JG MCLEVIGE WV ZANDIAN M HALL RL RICHARDSON PD
Citation: Me. Motamedi et al., MICROOPTIC INTEGRATION WITH FOCAL-PLANE ARRAYS, Optical engineering, 36(5), 1997, pp. 1374-1381
P-TYPE ARSENIC DOPING OF HG1-XCDXTE BY MOLECULAR-BEAM EPITAXY
Authors: ZANDIAN M CHEN AC EDWALL DD PASKO JG ARIAS JM
Citation: M. Zandian et al., P-TYPE ARSENIC DOPING OF HG1-XCDXTE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 71(19), 1997, pp. 2815-2817
PLANAR P-ON-N HGCDTE HETEROSTRUCTURE INFRARED PHOTODIODES ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
Authors: DHAR NK ZANDIAN M PASKO JG ARIAS JM DINAN JH
Citation: Nk. Dhar et al., PLANAR P-ON-N HGCDTE HETEROSTRUCTURE INFRARED PHOTODIODES ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 70(13), 1997, pp. 1730-1732
UNIFORM LOW DEFECT DENSITY MOLECULAR-BEAM EPITAXIAL HGCDTE
Authors: BAJAJ J ARIAS JM ZANDIAN M EDWALL DD PASKO JG BUBULAC LO KOZLOWSKI LJ
Citation: J. Bajaj et al., UNIFORM LOW DEFECT DENSITY MOLECULAR-BEAM EPITAXIAL HGCDTE, Journal of electronic materials, 25(8), 1996, pp. 1394-1401
MOLECULAR-BEAM EPITAXIAL HGCDTE MATERIAL CHARACTERISTICS AND DEVICE PERFORMANCE - REPRODUCIBILITY STATUS
Authors: BAJAJ J ARIAS JM ZANDIAN M PASKO JG KOZLOWSKI LJ DEWAMES RE TENNANT WE
Citation: J. Bajaj et al., MOLECULAR-BEAM EPITAXIAL HGCDTE MATERIAL CHARACTERISTICS AND DEVICE PERFORMANCE - REPRODUCIBILITY STATUS, Journal of electronic materials, 24(9), 1995, pp. 1067-1076
ORIGIN OF VOID DEFECTS IN HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY
Authors: ZANDIAN M ARIAS JM BAJAJ J PASKO JG BUBULAC LO DEWAMES RE
Citation: M. Zandian et al., ORIGIN OF VOID DEFECTS IN HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 24(9), 1995, pp. 1207-1210
MOLECULAR-BEAM EPITAXY HGCDTE GROWTH-INDUCED VOID DEFECTS AND THEIR EFFECT ON INFRARED PHOTODIODES
Authors: ARIAS JM ZANDIAN M BAJAJ J PASKO JG BUBULAC LO SHIN SH DEWAMES RE
Citation: Jm. Arias et al., MOLECULAR-BEAM EPITAXY HGCDTE GROWTH-INDUCED VOID DEFECTS AND THEIR EFFECT ON INFRARED PHOTODIODES, Journal of electronic materials, 24(5), 1995, pp. 521-524
ENHANCED ARSENIC DIFFUSION AND ACTIVATION IN HGCDTE
Authors: SHIN SH ARIAS JM ZANDIAN M PASKO JG BUBULAC LO DEWAMES RE
Citation: Sh. Shin et al., ENHANCED ARSENIC DIFFUSION AND ACTIVATION IN HGCDTE, Journal of electronic materials, 24(5), 1995, pp. 609-615
ROOM-TEMPERATURE CHARACTERIZATION OF HG1-XCDXTE P-ON-N HETEROSTRUCTURE PHOTODIODES
Authors: ZANDIAN M PASKO JG ARIAS JM DEWAMES RE SHIN SH
Citation: M. Zandian et al., ROOM-TEMPERATURE CHARACTERIZATION OF HG1-XCDXTE P-ON-N HETEROSTRUCTURE PHOTODIODES, Journal of electronic materials, 24(5), 1995, pp. 681-684
MOLECULAR-BEAM EPITAXY HGCDTE INFRARED PHOTOVOLTAIC DETECTORS
Authors: ARIAS JM PASKO JG ZANDIAN M KOZLOWSKI LJ DEWAMES RE
Citation: Jm. Arias et al., MOLECULAR-BEAM EPITAXY HGCDTE INFRARED PHOTOVOLTAIC DETECTORS, Optical engineering, 33(5), 1994, pp. 1422-1428
ANNEALING EFFECT ON THE P-TYPE CARRIER CONCENTRATION IN LOW-TEMPERATURE PROCESSED ARSENIC-DOPED HGCDTE
Authors: SHIN SH ARIAS JM ZANDIAN M PASKO JG BUBULAC LO DEWAMES RE
Citation: Sh. Shin et al., ANNEALING EFFECT ON THE P-TYPE CARRIER CONCENTRATION IN LOW-TEMPERATURE PROCESSED ARSENIC-DOPED HGCDTE, Journal of electronic materials, 22(8), 1993, pp. 1039-1047
MBE HGCDTE HETEROSTRUCTURE P-ON-N PLANAR INFRARED PHOTODIODES
Authors: ARIAS JM PASKO JG ZANDIAN M SHIN SH WILLIAMS GM BUBULAC LO DEWAMES RE TENNANT WE
Citation: Jm. Arias et al., MBE HGCDTE HETEROSTRUCTURE P-ON-N PLANAR INFRARED PHOTODIODES, Journal of electronic materials, 22(8), 1993, pp. 1049-1053
Risultati: 1-17 |