AAAAAA

   
Results: 1-9 |
Results: 9
BACKGROUND DOPING OF FILMS IN MOLECULAR-BEAM EPITAXY OF SILICON
Authors: KANTER BZ NIKIFOROV AI PCHELYAKOV OP
Citation: Bz. Kanter et al., BACKGROUND DOPING OF FILMS IN MOLECULAR-BEAM EPITAXY OF SILICON, Technical physics letters, 24(2), 1998, pp. 91-93
FORMATION OF ZERO-DIMENSIONAL HOLE STATES DURING MOLECULAR-BEAM EPITAXY OF GE ON SI(100)
Authors: YAKIMOV AI DVURECHENSKII AV NIKIFOROV AI PCHELYAKOV OP
Citation: Ai. Yakimov et al., FORMATION OF ZERO-DIMENSIONAL HOLE STATES DURING MOLECULAR-BEAM EPITAXY OF GE ON SI(100), JETP letters, 68(2), 1998, pp. 135-141
THE INFLUENCE OF THE EPITAXIAL-GROWTH TEMPERATURE ON THE PERIOD OF RHEED OSCILLATIONS
Authors: NIKIFOROV AI MARKOV VA PCHELYAKOV OP YANOVITSKAYA ZS
Citation: Ai. Nikiforov et al., THE INFLUENCE OF THE EPITAXIAL-GROWTH TEMPERATURE ON THE PERIOD OF RHEED OSCILLATIONS, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 7, 1997, pp. 1-9
SURFACE PROCESSES AND PHASE-DIAGRAMS IN MBE GROWTH OF SI GE HETEROSTRUCTURE/
Authors: PCHELYAKOV OP MARKOV VA NIKIFOROV AI SOKOLOV LV
Citation: Op. Pchelyakov et al., SURFACE PROCESSES AND PHASE-DIAGRAMS IN MBE GROWTH OF SI GE HETEROSTRUCTURE/, Thin solid films, 306(2), 1997, pp. 299-306
IN-SITU RHEED CONTROL OF DIRECT MBE GROWTH OF GE QUANTUM DOTS ON SI(001)
Authors: MARKOV VA NIKIFOROV AI PCHELYAKOV OP
Citation: Va. Markov et al., IN-SITU RHEED CONTROL OF DIRECT MBE GROWTH OF GE QUANTUM DOTS ON SI(001), Journal of crystal growth, 175, 1997, pp. 736-740
MOLECULAR EPITAXY OF GEXSI1-X FILMS ON SI (111) - FAST-ELECTRON DIFFRACTION TECHNIQUE
Authors: MARKOV VA PCHELYAKOV OP
Citation: Va. Markov et Op. Pchelyakov, MOLECULAR EPITAXY OF GEXSI1-X FILMS ON SI (111) - FAST-ELECTRON DIFFRACTION TECHNIQUE, Fizika tverdogo tela, 38(10), 1996, pp. 3152-3160
EFFECT OF THE TEMPERATURE OF AN EPITAXIAL FILM GROWTH ON THE PERIOD OF MIRROR REFLEX OSCILLATIONS UNDER THE DIFFRACTION OF FAST ELECTRONS
Authors: NIKIFOROV AI MARKOV VA PCHELYAKOV OP
Citation: Ai. Nikiforov et al., EFFECT OF THE TEMPERATURE OF AN EPITAXIAL FILM GROWTH ON THE PERIOD OF MIRROR REFLEX OSCILLATIONS UNDER THE DIFFRACTION OF FAST ELECTRONS, Pis'ma v Zurnal tehniceskoj fiziki, 22(24), 1996, pp. 54-59
RHEED INTENSITY OSCILLATIONS FROM SI(111) SURFACE IN THE PRESENCE OF SURFACE RESONANCE
Authors: REGINSKI K LAMIN MA MASHANOV VI PCHELYAKOV OP SOKOLOV LV
Citation: K. Reginski et al., RHEED INTENSITY OSCILLATIONS FROM SI(111) SURFACE IN THE PRESENCE OF SURFACE RESONANCE, Surface science, 327(1-2), 1995, pp. 93-99
CONDUCTANCE OSCILLATIONS IN GE SI HETEROSTRUCTURES CONTAINING QUANTUMDOTS/
Authors: YAKIMOV AI MARKOV VA DVURECHENSKII AV PCHELYAKOV OP
Citation: Ai. Yakimov et al., CONDUCTANCE OSCILLATIONS IN GE SI HETEROSTRUCTURES CONTAINING QUANTUMDOTS/, Journal of physics. Condensed matter, 6(13), 1994, pp. 2573-2582
Risultati: 1-9 |