Authors: HOLLANDER B MANTL S MAYER M KIRCHNER C PELZMANN A KAMP M CHRISTIANSEN S ALBRECHT M STRUNK HP

Citation: B. Hollander et al., ION CHANNELING STUDIES OF GAN LAYERS ON C-ORIENTED SAPPHIRE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1248-1252

Authors: PELZMANN A KIRCHNER C MAYER M SCHWEGLER V SCHAULER M KAMP M EBELING KJ GRZEGORY I LESZCZYNSKI M NOWAK G POROWSKI S

Citation: A. Pelzmann et al., BLUE-LIGHT-EMITTING DIODES ON GAN SUBSTRATES, GROWTH AND CHARACTERIZATION, Journal of crystal growth, 190, 1998, pp. 167-171

Authors: MAYER M PELZMANN A KIRCHNER C SCHAULER M EBERHARD F KAMP M UNGER P EBELING KJ

Citation: M. Mayer et al., DEVICE PERFORMANCE OF ULTRA-VIOLET EMITTING DIODES GROWN BY MBE, Journal of crystal growth, 190, 1998, pp. 782-785

Authors: SUSKI T JUN J LESZCZYNSKI M TEISSEYRE H STRITE S ROCKETT A PELZMANN A KAMP M EBELING KJ

Citation: T. Suski et al., OPTICAL ACTIVATION AND DIFFUSIVITY OF ION-IMPLANTED ZN ACCEPTORS IN GAN UNDER HIGH-PRESSURE, HIGH-TEMPERATURE ANNEALING, Journal of applied physics, 84(2), 1998, pp. 1155-1157

Authors: MAYER M PELZMANN A KAMP M EBELING KJ TEISSEYRE H NOWAK G LESZCZYNSKI M GRZEGORY I POROWSKI S KARCZEWSKI G

Citation: M. Mayer et al., HIGH-QUALITY HOMOEPITAXIAL GAN GROWN BY MOLECULAR-BEAM EPITAXY WITH NH3 ON SURFACE CRACKING, JPN J A P 2, 36(12B), 1997, pp. 1634-1636

Authors: CHRISTIANSEN S ALBRECHT M DORSCH W STRUNK HP PELZMANN A MAYER M KAMP M EBELING KJ ZANOTTIFREGONARA C SALVIATI G

Citation: S. Christiansen et al., MICROSTRUCTURE AND GROWTH-MORPHOLOGY AS RELATED TO ELECTROOPTICAL PROPERTIES OF HETEROEPITAXIAL WURTZITE GAN ON SAPPHIRE-(0001) SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 296-302