AAAAAA

   
Results: 1-25 | 26-33 |
Results: 26-33/33
NITROGEN DONORS AND DEEP LEVELS IN HIGH-QUALITY 4H-SIC EPILAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION
Authors: KIMOTO T ITOH A MATSUNAMI H SRIDHARA S CLEMEN LL DEVATY RP CHOYKE WJ DALIBOR T PEPPERMULLER C PENSL G
Citation: T. Kimoto et al., NITROGEN DONORS AND DEEP LEVELS IN HIGH-QUALITY 4H-SIC EPILAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 67(19), 1995, pp. 2833-2835
THERMAL CAPACITANCE SPECTROSCOPY OF EPITAXIAL 3C AND 6H-SIC PN JUNCTION DIODES GROWN SIDE-BY-SIDE ON A GH-SIC SUBSTRATE
Authors: SADDOW SE LANG M DALIBOR T PENSL G NEUDECK PG
Citation: Se. Saddow et al., THERMAL CAPACITANCE SPECTROSCOPY OF EPITAXIAL 3C AND 6H-SIC PN JUNCTION DIODES GROWN SIDE-BY-SIDE ON A GH-SIC SUBSTRATE, Applied physics letters, 66(26), 1995, pp. 3612-3614
THERMAL DONORS IN SILICON - AN INVESTIGATION OF THEIR STRUCTURE WITH ELECTRON-NUCLEAR DOUBLE-RESONANCE
Authors: MEILWES N SPAETH JM GOTZ W PENSL G
Citation: N. Meilwes et al., THERMAL DONORS IN SILICON - AN INVESTIGATION OF THEIR STRUCTURE WITH ELECTRON-NUCLEAR DOUBLE-RESONANCE, Semiconductor science and technology, 9(9), 1994, pp. 1623-1632
ANISOTROPY OF THE ELECTRON HALL-MOBILITY IN 4H, 6H, AND 15R SILICON-CARBIDE
Authors: SCHADT M PENSL G DEVATY RP CHOYKE WJ STEIN R STEPHANI D
Citation: M. Schadt et al., ANISOTROPY OF THE ELECTRON HALL-MOBILITY IN 4H, 6H, AND 15R SILICON-CARBIDE, Applied physics letters, 65(24), 1994, pp. 3120-3122
INTENSE ERBIUM-1.54-MU-M PHOTOLUMINESCENCE FROM 2 TO 525 K IN ION-IMPLANTED 4H, 6H, 15R, AND 3C SIC
Authors: CHOYKE WJ DEVATY RP CLEMEN LL YOGANATHAN M PENSL G HASSLER C
Citation: Wj. Choyke et al., INTENSE ERBIUM-1.54-MU-M PHOTOLUMINESCENCE FROM 2 TO 525 K IN ION-IMPLANTED 4H, 6H, 15R, AND 3C SIC, Applied physics letters, 65(13), 1994, pp. 1668-1670
CVD GROWTH AND CHARACTERIZATION OF SINGLE-CRYSTALLINE 6H-SILICON CARBIDE
Authors: KARMANN S HABERSTROH C ENGELBRECHT F SUTTROP W SCHONER A SCHADT M HELBIG R PENSL G STEIN RA LEIBENZEDER S
Citation: S. Karmann et al., CVD GROWTH AND CHARACTERIZATION OF SINGLE-CRYSTALLINE 6H-SILICON CARBIDE, Physica. B, Condensed matter, 185(1-4), 1993, pp. 75-78
ELECTRICAL AND OPTICAL CHARACTERIZATION OF SIC
Authors: PENSL G CHOYKE WJ
Citation: G. Pensl et Wj. Choyke, ELECTRICAL AND OPTICAL CHARACTERIZATION OF SIC, Physica. B, Condensed matter, 185(1-4), 1993, pp. 264-283
EVIDENCE FOR A VACANCY-RELATED GROUND-STATE OF THE DX CENTER IN ALXGA1-XSB - A POSITRON-ANNIHILATION STUDY
Authors: KRAUSEREHBERG R DROST T POLITY A ROOS G PENSL G VOLM D MEYER BK BISCHOPINK G BENZ KW
Citation: R. Krauserehberg et al., EVIDENCE FOR A VACANCY-RELATED GROUND-STATE OF THE DX CENTER IN ALXGA1-XSB - A POSITRON-ANNIHILATION STUDY, Physical review. B, Condensed matter, 48(16), 1993, pp. 11723-11725
Risultati: 1-25 | 26-33 |