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Results:
1-16
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Results: 16
Authors:
PERESSI M
BINGGELI N
BALDERESCHI A
Citation: M. Peressi et al., BAND ENGINEERING AT INTERFACES - THEORY AND NUMERICAL EXPERIMENTS, Journal of physics. D, Applied physics, 31(11), 1998, pp. 1273-1299
Authors:
PERESSI M
BALDERESCHI A
Citation: M. Peressi et A. Baldereschi, STRUCTURAL AND ELECTRONIC-PROPERTIES OF GA2SE3, Journal of applied physics, 83(6), 1998, pp. 3092-3095
Authors:
TINIVELLA U
PERESSI M
BALDERESCHI A
Citation: U. Tinivella et al., RANDOM PSEUDOBINARY IONIC ALLOYS - LATTICE ENERGY AND STRUCTURAL-PROPERTIES, Journal of physics. Condensed matter, 9(50), 1997, pp. 11141-11149
Authors:
DIVENTRA M
PERESSI M
BALDERESCHI A
Citation: M. Diventra et al., ROLE OF STRUCTURAL AND CHEMICAL CONTRIBUTIONS TO VALENCE-BAND OFFSETSAT STRAINED-LAYER HETEROJUNCTIONS - THE GAAS GAP (001) CASE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2936-2939
Authors:
TIT N
PERESSI M
Citation: N. Tit et M. Peressi, AB-INITIO ELECTRONIC-STRUCTURE CALCULATION OF THE INAS MULTIPLE-QUANTUM WELLS IN BULK GAAS, Applied surface science, 104, 1996, pp. 656-660
Authors:
DIVENTRA M
PERESSI M
BALDERESCHI A
Citation: M. Diventra et al., CHEMICAL AND STRUCTURAL CONTRIBUTIONS TO THE VALENCE-BAND OFFSET AT GAP GAAS HETEROJUNCTIONS/, Physical review. B, Condensed matter, 54(8), 1996, pp. 5691-5695
Authors:
MONTANARI B
PERESSI M
BARONI S
MOLINARI E
Citation: B. Montanari et al., INAS GASB(001) VALENCE-BAND OFFSET - INDEPENDENCE OF INTERFACE COMPOSITION AND STRAIN/, Applied physics letters, 69(21), 1996, pp. 3218-3220
Authors:
LAZZOUNI ME
PERESSI M
BALDERESCHI A
Citation: Me. Lazzouni et al., VALENCE-BAND OFFSET AT THE SI GAP(110) INTERFACE/, Applied physics letters, 68(1), 1996, pp. 75-77
Authors:
TIT N
PERESSI M
Citation: N. Tit et M. Peressi, ROLE OF THE INAS MONOMOLECULAR PLANE INSERTED IN BULK GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 386-390
Authors:
TIT N
PERESSI M
Citation: N. Tit et M. Peressi, ELECTRONIC-STRUCTURE OF GAAS WITH AN INAS(001) MONOLAYER, Physical review. B, Condensed matter, 52(15), 1995, pp. 10776-10779
Authors:
BRATINA G
VANZETTI L
SORBA L
BIASIOL G
FRANCIOSI A
PERESSI M
BARONI S
Citation: G. Bratina et al., LACK OF BAND-OFFSET TRANSITIVITY FOR SEMICONDUCTOR HETEROJUNCTIONS WITH POLAR ORIENTATION - ZNSE-GE(001), GE-GAAS(001), AND ZNSE-GAAS(001), Physical review. B, Condensed matter, 50(16), 1994, pp. 11723-11729
Authors:
PERESSI M
BARONI S
Citation: M. Peressi et S. Baroni, BULK AND INTERFACIAL STRAIN IN SI GE HETEROSTRUCTURES/, Physical review. B, Condensed matter, 49(11), 1994, pp. 7490-7498
Authors:
NICOLINI R
VANZETTI L
MULA G
BRATINA G
SORBA L
FRANCIOSI A
PERESSI M
BARONI S
RESTA R
BALDERESCHI A
ANGELO JE
GERBERICH WW
Citation: R. Nicolini et al., LOCAL INTERFACE COMPOSITION AND BAND DISCONTINUITIES IN HETEROVALENT HETEROSTRUCTURES, Physical review letters, 72(2), 1994, pp. 294-297
Authors:
BALDERESCHI A
PERESSI M
Citation: A. Baldereschi et M. Peressi, ATOMIC-SCALE STRUCTURE OF IONIC AND SEMICONDUCTING SOLID-SOLUTIONS, Journal of physics. Condensed matter, 5, 1993, pp. 37-48
Authors:
TIT N
PERESSI M
BARONI S
Citation: N. Tit et al., AB-INITIO CALCULATION OF THE BAND-OFFSET AT STRAINED GAAS INAS(001) HETEROJUNCTIONS/, Physical review. B, Condensed matter, 48(23), 1993, pp. 17607-17610
Authors:
PERESSI M
COLOMBO L
RESTA R
BARONI S
BALDERESCHI A
Citation: M. Peressi et al., STRUCTURAL AND ELECTRONIC-PROPERTIES OF STRAINED SI GAAS HETEROSTRUCTURES/, Physical review. B, Condensed matter, 48(16), 1993, pp. 12047-12052
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1-16
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