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Results:
1-7
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Results: 7
Authors:
MCHUGO SA
THOMPSON AC
PERICHAUD I
MARTINUZZI S
Citation: Sa. Mchugo et al., DIRECT CORRELATION OF TRANSITION-METAL IMPURITIES AND MINORITY-CARRIER RECOMBINATION IN MULTICRYSTALLINE SILICON, Applied physics letters, 72(26), 1998, pp. 3482-3484
Authors:
MARTINUZZI S
PERICHAUD I
SIMON JJ
Citation: S. Martinuzzi et al., EXTERNAL GETTERING BY ALUMINUM-SILICON ALLOYING OBSERVED FROM CARRIERRECOMBINATION AT DISLOCATIONS IN FLOAT-ZONE SILICON-WAFERS, Applied physics letters, 70(20), 1997, pp. 2744-2746
Authors:
PERICHAUD I
SIMON JJ
MARTINUZZI S
Citation: I. Perichaud et al., LBIC INVESTIGATION OF IMPURITY-DISLOCATION INTERACTION IN FZ SILICON-WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 265-269
Authors:
SIMON JJ
PERICHAUD I
Citation: Jj. Simon et I. Perichaud, INFLUENCE OF OXYGEN ON THE RECOMBINATION STRENGTH OF DISLOCATIONS IN SILICON-WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 183-186
Authors:
SIMON JJ
PERICHAUD I
BURLE N
PASQUINELLI M
MARTINUZZI S
Citation: Jj. Simon et al., INFLUENCE OF PHOSPHORUS DIFFUSION ON THE RECOMBINATION STRENGTH OF DISLOCATIONS IN FLOAT-ZONE SILICON-WAFERS, Journal of applied physics, 80(9), 1996, pp. 4921-4927
Authors:
MARTINUZZI S
PORRE O
PERICHAUD I
PASQUINELLI M
Citation: S. Martinuzzi et al., ALUMINUM GETTERING IN SILICON-WAFERS, Journal de physique. III, 5(9), 1995, pp. 1337-1343
Authors:
YAKIMOV E
PERICHAUD I
Citation: E. Yakimov et I. Perichaud, PHOSPHORUS DIFFUSION EFFECT ON DEFECT STRUCTURE OF SILICON WITH OXYGEN PRECIPITATES REVEALED BY GOLD DIFFUSION STUDY, Applied physics letters, 67(14), 1995, pp. 2054-2056
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1-7
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