Authors:
UREN GD
GOORSKY MS
KOONTZ EM
LIM MH
PETRICH GS
KOLODZIEJSKI LA
WONG VV
SMITH HI
MATNEY KM
WORMINGTON M
Citation: Gd. Uren et al., ANALYSIS OF LATTICE-DISTORTIONS IN HIGH-QUALITY INGAASP EPITAXIAL OVERGROWTH OF RECTANGULAR-PATTERNED INP GRATINGS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1381-1384
Authors:
AHADIAN JF
VAIDYANATHAN PT
PATTERSON SG
ROYTER Y
MULL D
PETRICH GS
GOODHUE WD
PRASAD S
KOLODZIEJSKI LA
FONSTAD CG
Citation: Jf. Ahadian et al., PRACTICAL OEICS BASED ON THE MONOLITHIC INTEGRATION OF GAAS-INGAP LEDS WITH COMMERCIAL GAAS VLSI ELECTRONICS, IEEE journal of quantum electronics, 34(7), 1998, pp. 1117-1123
Citation: E. Ho et al., COMPARISON OF HYDROGEN PASSIVATION OF ZNSE-N USING GAS-SOURCE AND CONVENTIONAL MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 266-270
Authors:
FISHER PA
HO E
HOUSE JL
PETRICH GS
KOLODZIEJSKI LA
WALKER J
JOHNSON NM
Citation: Pa. Fisher et al., P-TYPE AND N-TYPE DOPING OF ZNSE - EFFECTS OF HYDROGEN INCORPORATION, Journal of crystal growth, 150(1-4), 1995, pp. 729-733
Authors:
HO E
FISHER PA
HOUSE JL
PETRICH GS
KOLODZIEJSKI LA
WALKER J
JOHNSON NM
Citation: E. Ho et al., HYDROGEN PASSIVATION IN NITROGEN AND CHLORINE-DOPED ZNSE FILMS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 66(9), 1995, pp. 1062-1064
Authors:
LU K
FISHER PA
HOUSE JL
HO E
CORONADO CA
PETRICH GS
KOLODZIEJSKI LA
HUA GC
OTSUKA N
Citation: K. Lu et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE ON NOVEL BUFFER LAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1153-1155