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Results:
1-9
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Results: 9
Authors:
GRENET G
GENDRY M
OUSTRIC M
ROBACH Y
PORTE L
HOLLINGER G
MARTY O
PITAVAL M
PRIESTER C
Citation: G. Grenet et al., SURFACE SPINODAL DECOMPOSITION IN LOW-TEMPERATURE AL0.48IN0.52 GROWN ON INP(001) BY MOLECULAR-BEAM EPITAXY, Applied surface science, 123, 1998, pp. 324-328
Authors:
RAMOS SMM
CANUT B
AMBRI M
BONARDI N
BRENIER R
PITAVAL M
THEVENARD P
BRUNEL M
Citation: Smm. Ramos et al., FORMATION OF POLYCRYSTALLINE BATIXOY COMPOUNDS IN BARIUM IMPLANTED TIO2, Applied surface science, 93(2), 1996, pp. 191-196
Authors:
RAMOS SMM
CANUT B
AMBRI M
CLEMENT C
DOORYHEE E
PITAVAL M
THEVENARD P
TOULEMONDE M
Citation: Smm. Ramos et al., EUROPIUM DIFFUSION ENHANCEMENT IN LINBO3 IRRADIATED WITH GEV NICKEL IONS - INFLUENCE OF THE DAMAGE MORPHOLOGY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 107(1-4), 1996, pp. 254-258
Authors:
MORIN P
PITAVAL M
VICARIO E
Citation: P. Morin et al., LOW-ENERGY OFF-AXIS HOLOGRAPHY IN ELECTRON-MICROSCOPY, Physical review letters, 76(21), 1996, pp. 3979-3982
Authors:
DROUOT V
GENDRY M
SANTINELLI C
LETARTE X
TARDY J
VIKTOROVITCH P
HOLLINGER G
AMBRI M
PITAVAL M
Citation: V. Drouot et al., DESIGN AND GROWTH INVESTIGATIONS OF STRAINED INXGA1-XAS INALAS/INP HETEROSTRUCTURES FOR HIGH-ELECTRON-MOBILITY TRANSISTOR APPLICATION/, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1326-1335
Authors:
SAOUDI R
HOLLINGER G
GAGNAIRE A
PITAVAL M
MOLLE P
Citation: R. Saoudi et al., PHYSICOCHEMICAL AND STRUCTURAL STUDY OF V ERY THIN SILICON-NITRIDE AND OXYNITRIDE FORMED BY RAPID THERMAL-TREATMENT, Journal de physique. III, 5(5), 1995, pp. 557-573
Authors:
CANUT B
BRENIER R
MEFTAH A
MORETTI P
SALEM SO
PITAVAL M
RAMOS SMM
THEVENARD P
TOULEMONDE M
Citation: B. Canut et al., LATENT TRACK FORMATION IN LINBO3 SINGLE-CRYSTALS IRRADIATED BY GEV URANIUM IONS, Radiation effects and defects in solids, 136(1-4), 1995, pp. 1217-1220
Authors:
GENDRY M
PORTE L
HOLLINGER G
LOUBET JL
MIOSSI C
PITAVAL M
Citation: M. Gendry et al., EVIDENCE FOR INHOMOGENEOUS GROWTH-RATES IN PARTIALLY RELAXED INGAAS INP HETEROSTRUCTURES/, Journal of applied physics, 78(5), 1995, pp. 3138-3143
Authors:
SAOUDI R
HOLLINGER G
GAGNAIRE A
FERRET P
PITAVAL M
Citation: R. Saoudi et al., VERY THIN SILICON DIOXIDE FILM THICKNESS DETERMINATION USING TRANSMISSION ELECTRON-MICROSCOPY, SPECTROSCOPIC ELLIPSOMETRY AND X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal de physique. III, 3(7), 1993, pp. 1479-1488
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