Authors: PONCE FA KRUSOR BS MAJOR JS PLANO WE WELCH DF

Citation: Fa. Ponce et al., MICROSTRUCTURE OF GAN EPITAXY ON SIC USING ALN BUFFER LAYERS, Applied physics letters, 67(3), 1995, pp. 410-412

Authors: PLANO WE MAJOR JS WELCH DF

Citation: We. Plano et al., HIGH-POWER 875-NM AL-FREE LASER-DIODES, IEEE photonics technology letters, 6(4), 1994, pp. 465-467

Authors: PLANO WE MAJOR JS WELCH DF SPEIRS J

Citation: We. Plano et al., X-RAY STUDIES OF HIGH-QUALITY GAN GROWN ON 0001 SAPPHIRE, Electronics Letters, 30(24), 1994, pp. 2079-2081

Authors: MEHUYS DG MAJOR JS PLANO WE WELCH DF

Citation: Dg. Mehuys et al., 620 MW NEAR-DIFFRACTION-LIMITED, 1.8-MU-M TAPERED LASER, Electronics Letters, 30(14), 1994, pp. 1131-1133

Authors: MEHUYS D GEELS RS PLANO WE WELCH DF

Citation: D. Mehuys et al., 1.5W VISIBLE, NEAR-DIFFRACTION-LIMITED, TAPERED-STRIPE OPTICAL AMPLIFIER, Electronics Letters, 30(12), 1994, pp. 961-962

Authors: PONCE FA MAJOR JS PLANO WE WELCH DF

Citation: Fa. Ponce et al., CRYSTALLINE-STRUCTURE OF ALGAN EPITAXY ON SAPPHIRE USING ALN BUFFER LAYERS, Applied physics letters, 65(18), 1994, pp. 2302-2304