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Results: 1-10 |
Results: 10
SURFACE PROCESSES RESPONSIBLE FOR REFLECTANCE-ANISOTROPY OSCILLATIONSDURING MOLECULAR-BEAM EPITAXY GROWTH OF GAAS(001)
Authors: RUMBERG J ZETTLER JT STAHRENBERG K PLOSKA K RICHTER W DAWERITZ L SCHUTZENDUBE P WASSERMEIER M
Citation: J. Rumberg et al., SURFACE PROCESSES RESPONSIBLE FOR REFLECTANCE-ANISOTROPY OSCILLATIONSDURING MOLECULAR-BEAM EPITAXY GROWTH OF GAAS(001), Surface science, 337(1-2), 1995, pp. 103-108
ANISOTROPIC REFLECTANCE FROM SEMICONDUCTOR SURFACES FOR IN-SITU MONITORING IN EPITAXIAL-GROWTH SYSTEMS
Authors: ZORN M JONSSON J RICHTER W ZETTLER JT PLOSKA K
Citation: M. Zorn et al., ANISOTROPIC REFLECTANCE FROM SEMICONDUCTOR SURFACES FOR IN-SITU MONITORING IN EPITAXIAL-GROWTH SYSTEMS, Physica status solidi. a, Applied research, 152(1), 1995, pp. 23-34
REFLECTANCE ANISOTROPY OSCILLATIONS DURING MOCVD AND MBE GROWTH OF GAAS(001)
Authors: ZETTLER JT RUMBERG J PLOSKA K STAHRENBERG K PRISTOVSEK M RICHTER W WASSERMEIER M SCHUTZENDUBE P BEHREND J DAWERITZ L
Citation: Jt. Zettler et al., REFLECTANCE ANISOTROPY OSCILLATIONS DURING MOCVD AND MBE GROWTH OF GAAS(001), Physica status solidi. a, Applied research, 152(1), 1995, pp. 35-47
METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH ON VICINAL GAAS(001) SURFACES STUDIED BY REFLECTANCE ANISOTROPY SPECTROSCOPY
Authors: PLOSKA K PRISTOVSEK M RICHTER W JONSSON J KAMIYA I ZETTLER JT
Citation: K. Ploska et al., METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH ON VICINAL GAAS(001) SURFACES STUDIED BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Physica status solidi. a, Applied research, 152(1), 1995, pp. 49-59
GROWTH OSCILLATIONS WITH MONOLAYER PERIODICITY MONITORED BY ELLIPSOMETRY DURING METALORGANIC VAPOR-PHASE EPITAXY OF GAAS(001)
Authors: ZETTLER JT WETHKAMP T ZORN M PRISTOVSEK M MEYNE C PLOSKA K RICHTER W
Citation: Jt. Zettler et al., GROWTH OSCILLATIONS WITH MONOLAYER PERIODICITY MONITORED BY ELLIPSOMETRY DURING METALORGANIC VAPOR-PHASE EPITAXY OF GAAS(001), Applied physics letters, 67(25), 1995, pp. 3783-3785
MONOLAYER GROWTH OSCILLATIONS AND SURFACE-STRUCTURE OF GAAS(001) DURING METALORGANIC VAPOR-PHASE EPITAXY GROWTH
Authors: REINHARDT F JONSSON J ZORN M RICHTER W PLOSKA K RUMBERG J KURPAS P
Citation: F. Reinhardt et al., MONOLAYER GROWTH OSCILLATIONS AND SURFACE-STRUCTURE OF GAAS(001) DURING METALORGANIC VAPOR-PHASE EPITAXY GROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2541-2546
SURFACE PROCESSES BEFORE AND DURING GROWTH OF GAAS(001)
Authors: PLOSKA K ZETTLER JT RICHTER W JONSSON J REINHARDT F RUMBERG J PRISTOVSEK M ZORN M WESTWOOD D WILLIAMS RH
Citation: K. Ploska et al., SURFACE PROCESSES BEFORE AND DURING GROWTH OF GAAS(001), Journal of crystal growth, 145(1-4), 1994, pp. 44-52
IN-SITU REFLECTANCE ANISOTROPY STUDIES OF TERNARY III-V SURFACES AND GROWTH OF HETEROSTRUCTURES
Authors: ZORN M JONSSON J KROST A RICHTER W ZETTLER JT PLOSKA K REINHARDT F
Citation: M. Zorn et al., IN-SITU REFLECTANCE ANISOTROPY STUDIES OF TERNARY III-V SURFACES AND GROWTH OF HETEROSTRUCTURES, Journal of crystal growth, 145(1-4), 1994, pp. 53-60
IN-SITU TIME-RESOLVED MONITORING OF PH3 INDUCED EXCHANGE-REACTIONS ONGAAS UNDER METALORGANIC VAPOR-PHASE EPITAXY CONDITIONS
Authors: JONSSON J REINHARDT F ZORN M PLOSKA K RICHTER W RUMBERG J
Citation: J. Jonsson et al., IN-SITU TIME-RESOLVED MONITORING OF PH3 INDUCED EXCHANGE-REACTIONS ONGAAS UNDER METALORGANIC VAPOR-PHASE EPITAXY CONDITIONS, Applied physics letters, 64(15), 1994, pp. 1998-2000
GAAS SURFACE CONTROL DURING METALORGANIC VAPOR-PHASE EPITAXY BY REFLECTANCE ANISOTROPY SPECTROSCOPY
Authors: REINHARDT F RICHTER W MULLER AB GUTSCHE D KURPAS P PLOSKA K ROSE KC ZORN M
Citation: F. Reinhardt et al., GAAS SURFACE CONTROL DURING METALORGANIC VAPOR-PHASE EPITAXY BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1427-1430
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