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Results:
1-23
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Results: 23
Authors:
KEEBLE DJ
TOOKE AO
YOUNG CF
POINDEXTER EH
LI Z
Citation: Dj. Keeble et al., ELECTRON-PARAMAGNETIC-RESONANCE OF MN4- LOW-TEMPERATURE BEHAVIOR( IN PBTIO3 ), Journal of the Korean Physical Society, 32, 1998, pp. 675-678
Authors:
KEEBLE DJ
KRISHNAN A
FRIESSNEGG T
NIELSEN B
MADHUKAR S
AGGARWAL S
RAMESH R
POINDEXTER EH
Citation: Dj. Keeble et al., VACANCY DEFECTS IN THIN-FILM LA0.5SR0.5COO3-DELTA OBSERVED BY POSITRON-ANNIHILATION, Applied physics letters, 73(4), 1998, pp. 508-510
Authors:
YOUNG CF
POINDEXTER EH
GERARDI GJ
WARREN WL
KEEBLE DJ
Citation: Cf. Young et al., ELECTRON-PARAMAGNETIC-RESONANCE OF CONDUCTION-BAND ELECTRONS IN SILICON, Physical review. B, Condensed matter, 55(24), 1997, pp. 16245-16248
Authors:
YOUNG CF
POINDEXTER EH
GERARDI GJ
Citation: Cf. Young et al., ELECTRON-PARAMAGNETIC-RESONANCE OF POROUS SILICON - OBSERVATION AND IDENTIFICATION OF CONDUCTION-BAND ELECTRONS, Journal of applied physics, 81(11), 1997, pp. 7468-7470
Authors:
KEEBLE DJ
POINDEXTER EH
GERARDI GJ
Citation: Dj. Keeble et al., ELECTRON-PARAMAGNETIC-RESONANCE STUDIES OF IMPURITY DEFECTS IN PBTIO3, Applied spectroscopy, 51(1), 1997, pp. 117-122
ELECTRON-PARAMAGNETIC-RESONANCE OF NITROGEN PAIRS AND TRIADS IN 6H-SIC - ANALYSIS AND IDENTIFICATION
Authors:
YOUNG CF
XIE K
POINDEXTER EH
GERARDI GJ
KEEBLE DJ
Citation: Cf. Young et al., ELECTRON-PARAMAGNETIC-RESONANCE OF NITROGEN PAIRS AND TRIADS IN 6H-SIC - ANALYSIS AND IDENTIFICATION, Applied physics letters, 70(14), 1997, pp. 1858-1860
Authors:
WARREN WL
TUTTLE BA
RONG FC
GERARDI GJ
POINDEXTER EH
Citation: Wl. Warren et al., ELECTRON-PARAMAGNETIC-RESONANCE INVESTIGATION OF ACCEPTOR CENTERS IN PB(ZR,TI)O-3 CERAMICS, Journal of the American Ceramic Society, 80(3), 1997, pp. 680-684
Authors:
WARREN WL
KANICKI J
POINDEXTER EH
Citation: Wl. Warren et al., PARAMAGNETIC POINT-DEFECTS IN SILICON-NITRIDE AND SILICON OXYNITRIDE THIN-FILMS ON SILICON, Colloids and surfaces. A, Physicochemical and engineering aspects, 115, 1996, pp. 311-317
Authors:
WARREN WL
SEAGER CH
ROBERTSON J
KANICKI J
POINDEXTER EH
Citation: Wl. Warren et al., CREATION AND PROPERTIES OF NITROGEN DANGLING BOND DEFECTS IN SILICON-NITRIDE THIN-FILMS, Journal of the Electrochemical Society, 143(11), 1996, pp. 3685-3691
Authors:
GERARDI GJ
POINDEXTER EH
KEEBLE DJ
Citation: Gj. Gerardi et al., PARAMAGNETIC CENTERS AND DOPANT EXCITATION IN CRYSTALLINE SILICON-CARBIDE, Applied spectroscopy, 50(11), 1996, pp. 1428-1434
Authors:
KEEBLE DJ
KRISHNAN A
UMLOR MT
LYNN KG
WARREN WL
DIMOS D
TUTTLE BA
RAMESH R
POINDEXTER EH
Citation: Dj. Keeble et al., POSITRON-ANNIHILATION STUDIES OF VACANCY RELATED DEFECTS IN CERAMIC AND THIN-FILM PB(ZR,TI)O-3 MATERIALS, Integrated ferroelectrics, 8(1-2), 1995, pp. 121-128
Authors:
KEEBLE DJ
LI Z
POINDEXTER EH
Citation: Dj. Keeble et al., ELECTRON-PARAMAGNETIC-RESONANCE OF MN4+ IN PBTIO3, Journal of physics. Condensed matter, 7(31), 1995, pp. 6327-6333
Authors:
POINDEXTER EH
Citation: Eh. Poindexter, PHYSICAL-CHEMISTRY OF HYDROGENOUS SPECIES IN THE SI-SIO2 SYSTEM, Zeitschrift fur Naturforschung. A, A journal of physical sciences, 50(7), 1995, pp. 653-665
Authors:
POINDEXTER EH
Citation: Eh. Poindexter, CHEMICAL-REACTIONS OF HYDROGENOUS SPECIES IN THE SI SIO2 SYSTEM/, Journal of non-crystalline solids, 187, 1995, pp. 257-263
Authors:
POINDEXTER EH
WARREN WL
Citation: Eh. Poindexter et Wl. Warren, PARAMAGNETIC POINT-DEFECTS IN AMORPHOUS THIN-FILMS OF SIO2 AND SI3N4 - UPDATES AND ADDITIONS, Journal of the Electrochemical Society, 142(7), 1995, pp. 2508-2516
Authors:
HELMS CR
POINDEXTER EH
Citation: Cr. Helms et Eh. Poindexter, THE SILICON SILICON-DIOXIDE SYSTEM - ITS MICROSTRUCTURE AND IMPERFECTIONS, Reports on progress in physics, 57(8), 1994, pp. 791-852
Authors:
BROWER KL
MYERS SM
EDWARDS AH
JOHNSON NM
VANDEWALLE CG
POINDEXTER EH
Citation: Kl. Brower et al., ELECTRON-PARAMAGNETIC-RESONANCE OF MOLECULAR-HYDROGEN IN SILICON - COMMENT, Physical review letters, 73(10), 1994, pp. 1456-1456
Authors:
POINDEXTER EH
RONG FC
BUCHWALD WR
GERARDI GJ
KEEBLE DJ
WARREN WL
Citation: Eh. Poindexter et al., ELECTRICALLY-DETECTED MAGNETIC-RESONANCE NEAR THE P-DOPED N-DOPED INTERFACE OF SI JUNCTION DIODES, Colloids and surfaces. A, Physicochemical and engineering aspects, 72, 1993, pp. 119-125
Authors:
GERARDI GJ
RONG FC
POINDEXTER EH
HARMATZ M
SHEN H
WARREN WL
Citation: Gj. Gerardi et al., STUDY OF A PARAMAGNETIC CENTER ON AN SIO-TREATED GAAS SURFACE, Colloids and surfaces. A, Physicochemical and engineering aspects, 72, 1993, pp. 161-164
Authors:
RONG FC
HARVEY JF
POINDEXTER EH
GERARDI GJ
Citation: Fc. Rong et al., IDENTIFICATION AND PROPERTIES OF PB-LIKE CENTERS IN PHOTOLUMINESCENT POROUS SILICON, Microelectronic engineering, 22(1-4), 1993, pp. 147-150
Authors:
BUCHWALD WR
ZHAO JH
HARMATZ M
POINDEXTER EH
Citation: Wr. Buchwald et al., ELECTRON AND HOLE TRAPS IN HEAVILY COMPENSATED INGAAS GAAS HETEROSTRUCTURES/, Solid-state electronics, 36(7), 1993, pp. 1077-1082
Authors:
WARREN WL
KANICKI J
ROBERTSON J
POINDEXTER EH
MCWHORTER PJ
Citation: Wl. Warren et al., ELECTRON-PARAMAGNETIC-RESONANCE INVESTIGATION OF CHARGE TRAPPING CENTERS IN AMORPHOUS-SILICON NITRIDE FILMS, Journal of applied physics, 74(6), 1993, pp. 4034-4046
Authors:
RONG FC
HARVEY JF
POINDEXTER EH
GERARDI GJ
Citation: Fc. Rong et al., NATURE OF P-B-LIKE DANGLING-ORBITAL CENTERS IN LUMINESCENT POROUS SILICON, Applied physics letters, 63(7), 1993, pp. 920-922
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