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PETRIK P
POLGAR O
LOHNER T
FRIED M
KHANH NQ
GYULAI J
Citation: P. Petrik et al., ION IMPLANTATION-CAUSED DAMAGE DEPTH PROFILES IN SINGLE-CRYSTALLINE SILICON STUDIED BY SPECTROSCOPIC ELLIPSOMETRY AND RUTHERFORD BACKSCATTERING SPECTROMETRY, Vacuum, 50(3-4), 1998, pp. 293-297
Authors:
LOHNER T
PETRIK P
POLGAR O
KHANH NQ
FRIED M
GYULAI J
Citation: T. Lohner et al., ION-IMPLANTATION INDUCED BURIED DISORDER STUDIED BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND SPECTROSCOPIC ELLIPSOMETRY, Vacuum, 50(3-4), 1998, pp. 487-490
Authors:
FRIED M
WORMEESTER H
ZOETHOUT E
LOHNER T
POLGAR O
BARSONY I
Citation: M. Fried et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRIC INVESTIGATION OF VACUUM ANNEALED AND OXIDIZED POROUS SILICON LAYERS, Thin solid films, 313, 1998, pp. 459-463
Authors:
BOHER P
STEHLE JL
PIEL JP
FRIED M
LOHNER T
POLGAR O
KHANH NQ
BARSONY I
Citation: P. Boher et al., SPECTROSCOPIC ELLIPSOMETRY APPLIED TO THE DETERMINATION OF AN ION-IMPLANTATION DEPTH PROFILE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 160-168
Authors:
FRIED M
LOHNER T
POLGAR O
PETRIK P
VAZSONYI E
BARSONY I
PIEL JP
STEHLE JL
Citation: M. Fried et al., CHARACTERIZATION OF DIFFERENT POROUS SILICON STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 276(1-2), 1996, pp. 223-227