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Results: 5

Authors: PETRIK P POLGAR O LOHNER T FRIED M KHANH NQ GYULAI J
Citation: P. Petrik et al., ION IMPLANTATION-CAUSED DAMAGE DEPTH PROFILES IN SINGLE-CRYSTALLINE SILICON STUDIED BY SPECTROSCOPIC ELLIPSOMETRY AND RUTHERFORD BACKSCATTERING SPECTROMETRY, Vacuum, 50(3-4), 1998, pp. 293-297

Authors: LOHNER T PETRIK P POLGAR O KHANH NQ FRIED M GYULAI J
Citation: T. Lohner et al., ION-IMPLANTATION INDUCED BURIED DISORDER STUDIED BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND SPECTROSCOPIC ELLIPSOMETRY, Vacuum, 50(3-4), 1998, pp. 487-490

Authors: FRIED M WORMEESTER H ZOETHOUT E LOHNER T POLGAR O BARSONY I
Citation: M. Fried et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRIC INVESTIGATION OF VACUUM ANNEALED AND OXIDIZED POROUS SILICON LAYERS, Thin solid films, 313, 1998, pp. 459-463

Authors: BOHER P STEHLE JL PIEL JP FRIED M LOHNER T POLGAR O KHANH NQ BARSONY I
Citation: P. Boher et al., SPECTROSCOPIC ELLIPSOMETRY APPLIED TO THE DETERMINATION OF AN ION-IMPLANTATION DEPTH PROFILE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 160-168

Authors: FRIED M LOHNER T POLGAR O PETRIK P VAZSONYI E BARSONY I PIEL JP STEHLE JL
Citation: M. Fried et al., CHARACTERIZATION OF DIFFERENT POROUS SILICON STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 276(1-2), 1996, pp. 223-227
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