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Results: 1-8 |
Results: 8
QUANTITATIVE-EVALUATION OF BULK-DIFFUSED METAL CONTAMINATION BY LIFETIME TECHNIQUES
Authors: POLIGNANO ML BELLANDI E LODI D PIPIA F SABBADINI A ZANDERIGO F QUEIROLO G PRIOLO F
Citation: Ml. Polignano et al., QUANTITATIVE-EVALUATION OF BULK-DIFFUSED METAL CONTAMINATION BY LIFETIME TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 55(1-2), 1998, pp. 21-33
MOLYBDENUM CONTAMINATION IN SILICON 1 - MOLYBDENUM DETECTION BY LIFETIME TECHNIQUES
Authors: POLIGNANO ML BRESOLIN C PAVIA G SONCINI V ZANDERIGO F QUEIROLO G DIDIO M
Citation: Ml. Polignano et al., MOLYBDENUM CONTAMINATION IN SILICON 1 - MOLYBDENUM DETECTION BY LIFETIME TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 53(3), 1998, pp. 300-309
DENUDED ZONE THICKNESS FROM SURFACE PHOTOVOLTAGE MEASUREMENTS - COMPARISON WITH MICROSCOPY TECHNIQUES
Authors: POLIGNANO ML BRAMBILLA M CAZZANIGA F PAVIA G ZANDERIGO F
Citation: Ml. Polignano et al., DENUDED ZONE THICKNESS FROM SURFACE PHOTOVOLTAGE MEASUREMENTS - COMPARISON WITH MICROSCOPY TECHNIQUES, Journal of the Electrochemical Society, 145(5), 1998, pp. 1632-1639
STUDY OF SIO2-SI INTERFACES BY PHOTOCURRENT MEASUREMENTS
Authors: POLIGNANO ML FERRONI G SABBADINI A VALENTINI G QUEIROLO G
Citation: Ml. Polignano et al., STUDY OF SIO2-SI INTERFACES BY PHOTOCURRENT MEASUREMENTS, Journal of non-crystalline solids, 216, 1997, pp. 88-94
COMPARISON AMONG LIFETIME TECHNIQUES FOR THE DETECTION OF TRANSITION-METAL CONTAMINATION
Authors: POLIGNANO ML CAZZANIGA F SABBADINI A QUEIROLO G CACCIATO A DIBARTOLO A
Citation: Ml. Polignano et al., COMPARISON AMONG LIFETIME TECHNIQUES FOR THE DETECTION OF TRANSITION-METAL CONTAMINATION, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 157-163
OXYGEN-CONTENT OF SUBSTRATES AND TUNNEL OXIDE QUALITY - AN IN-LINE SYSTEMATIC ANALYSIS
Authors: SOTTOCASA E ILLUZZI F NAHMAD D POLIGNANO ML
Citation: E. Sottocasa et al., OXYGEN-CONTENT OF SUBSTRATES AND TUNNEL OXIDE QUALITY - AN IN-LINE SYSTEMATIC ANALYSIS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 187-191
MEASUREMENTS OF CARRIER DIFFUSION LENGTH IN PROCESSED WAFERS - CORRELATION WITH THE ELECTRICAL BEHAVIOR
Authors: POLIGNANO ML MAITRE L QUEIROLO G
Citation: Ml. Polignano et al., MEASUREMENTS OF CARRIER DIFFUSION LENGTH IN PROCESSED WAFERS - CORRELATION WITH THE ELECTRICAL BEHAVIOR, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 192-198
SPECTROMETRY OF VERY LONG-CURRENT TRANSIENTS IN ALMOST IDEAL SILICON P-N-JUNCTIONS
Authors: BASSO G PELLEGRINI B POLIGNANO ML
Citation: G. Basso et al., SPECTROMETRY OF VERY LONG-CURRENT TRANSIENTS IN ALMOST IDEAL SILICON P-N-JUNCTIONS, Journal of applied physics, 74(1), 1993, pp. 387-396
Risultati: 1-8 |