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Results: 1-17 |
Results: 17
REVIEW OF DEFECT INVESTIGATIONS BY MEANS OF POSITRON-ANNIHILATION IN II-VI COMPOUND SEMICONDUCTORS
Authors: KRAUSEREHBERG R LEIPNER HS ABGARJAN T POLITY A
Citation: R. Krauserehberg et al., REVIEW OF DEFECT INVESTIGATIONS BY MEANS OF POSITRON-ANNIHILATION IN II-VI COMPOUND SEMICONDUCTORS, Applied physics A: Materials science & processing, 66(6), 1998, pp. 599-614
DEFECTS IN ELECTRON-IRRADIATED SI STUDIED BY POSITRON-LIFETIME SPECTROSCOPY
Authors: POLITY A BORNER F HUTH S EICHLER S KRAUSEREHBERG R
Citation: A. Polity et al., DEFECTS IN ELECTRON-IRRADIATED SI STUDIED BY POSITRON-LIFETIME SPECTROSCOPY, Physical review. B, Condensed matter, 58(16), 1998, pp. 10363-10377
DETERMINATION OF THE DEFECT DEPTH PROFILE AFTER SAW CUTTING OF GAAS WAFERS MEASURED BY POSITRON-ANNIHILATION
Authors: BORNER F EICHLER S POLITY A KRAUSEREHBERG R HAMMER R JURISCH M
Citation: F. Borner et al., DETERMINATION OF THE DEFECT DEPTH PROFILE AFTER SAW CUTTING OF GAAS WAFERS MEASURED BY POSITRON-ANNIHILATION, Journal of applied physics, 84(4), 1998, pp. 2255-2262
STUDY OF DEFECTS IN ELECTRON-IRRADIATED CUINSE2 BY POSITRON LIFETIME SPECTROSCOPY
Authors: POLITY A KRAUSEREHBERG R STAAB TEM PUSKA MJ KLAIS J MOLLER HJ MEYER BK
Citation: A. Polity et al., STUDY OF DEFECTS IN ELECTRON-IRRADIATED CUINSE2 BY POSITRON LIFETIME SPECTROSCOPY, Journal of applied physics, 83(1), 1998, pp. 71-78
CHARACTERIZATION OF VACANCY-LIKE DEFECTS IN BORON-IMPLANTED SILICON WITH SLOW POSITRONS
Authors: GEBAUER J EICHLER S KRAUSEREHBERG R POLITY A
Citation: J. Gebauer et al., CHARACTERIZATION OF VACANCY-LIKE DEFECTS IN BORON-IMPLANTED SILICON WITH SLOW POSITRONS, Applied surface science, 116, 1997, pp. 215-221
DEFECTS IN SILICON AFTER B- A STUDY USING A POSITRON-BEAM TECHNIQUE, RUTHERFORD BACKSCATTERING, SECONDARY NEUTRAL MASS-SPECTROSCOPY, AND INFRARED-ABSORPTION SPECTROSCOPY( IMPLANTATION )
Authors: EICHLER S GEBAUER J BORNER F POLITY A KRAUSEREHBERG R WENDLER E WEBER B WESCH W BORNER H
Citation: S. Eichler et al., DEFECTS IN SILICON AFTER B- A STUDY USING A POSITRON-BEAM TECHNIQUE, RUTHERFORD BACKSCATTERING, SECONDARY NEUTRAL MASS-SPECTROSCOPY, AND INFRARED-ABSORPTION SPECTROSCOPY( IMPLANTATION ), Physical review. B, Condensed matter, 56(3), 1997, pp. 1393-1403
DEFECTS IN ELECTRON-IRRADIATED GAAS STUDIED BY POSITRON LIFETIME SPECTROSCOPY
Authors: POLITY A RUDOLF F NAGEL C EICHLER S KRAUSEREHBERG R
Citation: A. Polity et al., DEFECTS IN ELECTRON-IRRADIATED GAAS STUDIED BY POSITRON LIFETIME SPECTROSCOPY, Physical review. B, Condensed matter, 55(16), 1997, pp. 10467-10479
DEFECTS IN ELECTRON-IRRADIATED INP STUDIED BY POSITRON LIFETIME SPECTROSCOPY
Authors: POLITY A ENGELBRECHT T
Citation: A. Polity et T. Engelbrecht, DEFECTS IN ELECTRON-IRRADIATED INP STUDIED BY POSITRON LIFETIME SPECTROSCOPY, Physical review. B, Condensed matter, 55(16), 1997, pp. 10480-10486
ON THE CRYSTAL AND DEFECT STRUCTURE OF MANGANESE-DOPED BARIUM-TITANATE CERAMICS
Authors: LANGHAMMER HT MULLER T POLITY A FELGNER KH ABICHT HP
Citation: Ht. Langhammer et al., ON THE CRYSTAL AND DEFECT STRUCTURE OF MANGANESE-DOPED BARIUM-TITANATE CERAMICS, Materials letters, 26(4-5), 1996, pp. 205-210
MECHANICAL DAMAGE IN GAAS WAFERS INTRODUCED BY A DIAMOND SAW - A STUDY BY MEANS OF POSITRON-ANNIHILATION AND ELECTRON-MICROSCOPY
Authors: KRAUSEREHBERG R LEIPNER HS POLITY A RUDOLF F HAMMER R JURISCH M
Citation: R. Krauserehberg et al., MECHANICAL DAMAGE IN GAAS WAFERS INTRODUCED BY A DIAMOND SAW - A STUDY BY MEANS OF POSITRON-ANNIHILATION AND ELECTRON-MICROSCOPY, Physica status solidi. a, Applied research, 158(2), 1996, pp. 377-383
DEFECTS IN ELECTRON-IRRADIATED GAP STUDIED BY POSITRON LIFETIME SPECTROSCOPY
Authors: POLITY A ABGARJAN T KRAUSEREHBERG R
Citation: A. Polity et al., DEFECTS IN ELECTRON-IRRADIATED GAP STUDIED BY POSITRON LIFETIME SPECTROSCOPY, Applied physics A: Materials science & processing, 60(6), 1995, pp. 541-544
COMPENSATION MODELS IN CHLORINE DOPED CDTE BASED ON POSITION ANNIHILATION AND PHOTOLUMINESCENCE SPECTROSCOPY
Authors: STADLER W HOFMANN DM MEYER BK KRAUSEREHBERG R POLITY A ABGARJAN T SALK M BENZ KW AZOULAY M
Citation: W. Stadler et al., COMPENSATION MODELS IN CHLORINE DOPED CDTE BASED ON POSITION ANNIHILATION AND PHOTOLUMINESCENCE SPECTROSCOPY, Acta Physica Polonica. A, 88(5), 1995, pp. 921-924
POSITRON STUDY OF DEFECTS IN AS-GROWN AND PLASTICALLY DEFORMED GAAS-TE
Authors: KRAUSEREHBERG R LEIPNER HS KUPSCH A POLITY A DROST T
Citation: R. Krauserehberg et al., POSITRON STUDY OF DEFECTS IN AS-GROWN AND PLASTICALLY DEFORMED GAAS-TE, Physical review. B, Condensed matter, 49(4), 1994, pp. 2385-2395
EVIDENCE FOR A VACANCY-RELATED GROUND-STATE OF THE DX CENTER IN ALXGA1-XSB - A POSITRON-ANNIHILATION STUDY
Authors: KRAUSEREHBERG R DROST T POLITY A ROOS G PENSL G VOLM D MEYER BK BISCHOPINK G BENZ KW
Citation: R. Krauserehberg et al., EVIDENCE FOR A VACANCY-RELATED GROUND-STATE OF THE DX CENTER IN ALXGA1-XSB - A POSITRON-ANNIHILATION STUDY, Physical review. B, Condensed matter, 48(16), 1993, pp. 11723-11725
DEFECTS IN PLASTICALLY DEFORMED SEMICONDUCTORS STUDIED BY POSITRON-ANNIHILATION - SILICON AND GERMANIUM
Authors: KRAUSEREHBERG R BROHL M LEIPNER HS DROST T POLITY A BEYER U ALEXANDER H
Citation: R. Krauserehberg et al., DEFECTS IN PLASTICALLY DEFORMED SEMICONDUCTORS STUDIED BY POSITRON-ANNIHILATION - SILICON AND GERMANIUM, Physical review. B, Condensed matter, 47(20), 1993, pp. 13266-13276
ELECTRON-MICROSCOPY AND POSITRON INVESTIGATIONS OF PLASTICALLY DEFORMED GAAS
Authors: LEIPNER HS KRAUSEREHBERG R KUPSCH A DROST T POLITY A
Citation: Hs. Leipner et al., ELECTRON-MICROSCOPY AND POSITRON INVESTIGATIONS OF PLASTICALLY DEFORMED GAAS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 489-495
STUDY OF VACANCY DEFECTS IN PBSE AND PB1-XSNXSE BY POSITRON-ANNIHILATION
Authors: POLITY A KRAUSEREHBERG R ZLOMANOV V STANOV V CHATCHATUROV A MAKINEN S
Citation: A. Polity et al., STUDY OF VACANCY DEFECTS IN PBSE AND PB1-XSNXSE BY POSITRON-ANNIHILATION, Journal of crystal growth, 131(1-2), 1993, pp. 271-274
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