AAAAAA
Results:
1-16
|
Results: 16
Authors:
ELYUKHIN VA
AVRUTIN EA
MARSH JH
PORTNOI EL
Citation: Va. Elyukhin et al., DECOMPOSITION AND STABILITY OF GROUP-III NITRIDE TERNARY CUBIC SPONTANEOUSLY ORDERED ALLOYS, IEEE journal of selected topics in quantum electronics, 4(3), 1998, pp. 531-536
Authors:
BHATTACHARYYA D
VINOKUROV DA
GUSINSKII GM
ELYUKHIN VA
KOVALENKOV OV
KYUTT RN
MARSH JH
NAIDENOV VO
PORTNOI EL
Citation: D. Bhattacharyya et al., LOW-TEMPERATURE PHOTOLUMINESCENCE OF HEAVY-ION-IMPLANTED INGAP SOLID-SOLUTIONS, Technical physics letters, 24(9), 1998, pp. 690-691
Authors:
PORTNOI EL
VENUS GB
KHAZAN AA
GADJIEV IM
SHMARCEV AY
FRAHM J
KUHL D
Citation: El. Portnoi et al., SUPERHIGH-PO NER PICOSECOND OPTICAL PULSES FROM Q-SWITCHED DIODE-LASER, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 256-260
Authors:
KALITEEVSKII MA
PORTNOI EL
SOKOLOVSKII GS
Citation: Ma. Kaliteevskii et al., PHASE EFFECTS IN A SEMICONDUCTOR-LASER WITH DIFFRACTION EXTRACTION OFRADIATION, Technical physics letters, 23(9), 1997, pp. 699-700
Authors:
VENUS GB
GADZHIEV IM
GUBENKO AM
PORTNOI EL
KHAZAN AA
Citation: Gb. Venus et al., Q-SWITCHING IN SINGLE-HETEROJUNCTION LASERS AND GENERATION OF ULTRAHIGH-POWER PICOSECOND OPTICAL PULSES, Technical physics letters, 23(2), 1997, pp. 132-133
Authors:
ELYUKHIN VA
PORTNOI EL
AVRUTIN EA
MARSH JH
Citation: Va. Elyukhin et al., MISCIBILITY GAP OF TERNARY ALLOYS OF BINARY COMPOUNDS WITH ZINCBLENDEAND WURTZITE STRUCTURES USING THE CLUSTER VARIATION METHOD, Journal of crystal growth, 173(1-2), 1997, pp. 69-72
Authors:
ELYUKHIN VA
PORTNOI EL
Citation: Va. Elyukhin et El. Portnoi, IMMISCIBILITY ZONE OF TRIPLE SOLID-SOLUTI ONS OF A(3)B(5) COMPOUNDS, Zurnal tehniceskoj fiziki, 66(6), 1996, pp. 142-146
Authors:
DERYAGIN AG
KUKSENKOV DV
KUCHINSKII VI
PORTNOI EL
SMIRNITSKII VB
Citation: Ag. Deryagin et al., WAVELENGTH AND POLARIZATION SWITCHING IN INGAASP INP DFB LASERS/, IEE proceedings. Optoelectronics, 142(1), 1995, pp. 51-54
Authors:
PORTNOI EL
GORFINKEL VB
AVRUTIN EA
THAYNE IG
BARROW DA
MARSH JH
LURYI S
Citation: El. Portnoi et al., OPTOELECTRONIC MICROWAVE-RANGE FREQUENCY MIXING IN SEMICONDUCTOR-LASERS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 451-460
Authors:
OCHIAI M
RAFAILOV EU
DERYAGIN AG
KUCHINSKII VI
PORTNOI EL
MUZHUD A
SOKOLOVSKII GS
TEMKIN K
Citation: M. Ochiai et al., PICOSECOND INP PHOTOSENSORS OBTAINED BY T HE HEAVY-ION DEEP IMPLANTATION TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 21(22), 1995, pp. 72-77
Authors:
PORTNOI EL
GORFINKEL VB
BARROW DA
THAYNE IG
AVRUTIN EA
MARSH JH
Citation: El. Portnoi et al., SEMICONDUCTOR-LASERS AS INTEGRATED OPTOELECTRONIC UP DOWN-CONVERTERS/, Electronics Letters, 31(4), 1995, pp. 289-290
Authors:
LAUGHTON FR
MARSH JH
BARROW DA
PORTNOI EL
Citation: Fr. Laughton et al., THE 2-PHOTON ABSORPTION SEMICONDUCTOR WAVE-GUIDE AUTOCORRELATOR, IEEE journal of quantum electronics, 30(3), 1994, pp. 838-845
Authors:
DERYAGIN AG
KUKSENKOV DV
KUCHINSKII VI
PORTNOI EL
KHRUSHCHEV IY
Citation: Ag. Deryagin et al., GENERATION OF 110 GHZ TRAIN OF SUBPICOSECOND PULSES IN 1.535-MU-M SPECTRAL REGION BY PASSIVELY MODELOCKED INGAASP INP LASER-DIODES/, Electronics Letters, 30(4), 1994, pp. 309-311
Authors:
GURIEV AI
DERYAGIN AG
KUKSENKOV DV
KUCHINSKII VI
PORTNOI EL
SMIRNITSKII VB
GOLIKOVA EG
DURAEV VP
Citation: Ai. Guriev et al., POLARIZATION SWITCHING IN INGAASP-INP DF- LASERS WITH TENSE ACTIVE LAYER, Pis'ma v Zurnal tehniceskoj fiziki, 19(23), 1993, pp. 8-12
Authors:
GORDEEV NY
ZAITSEV SV
PORTNOI EL
SOSHNIKOV MP
KHVOSTIKOV VP
Citation: Ny. Gordeev et al., QUALITY MODULATION IN DHS LASERS WITH MUL TIMODE ACTIVE LAYER, Pis'ma v Zurnal tehniceskoj fiziki, 19(12), 1993, pp. 88-91
Authors:
VENUS GB
PORTNOI EL
SHERNYAKOV YM
YAVICH BS
Citation: Gb. Venus et al., STUDY OF INTERNAL BAND OF AMPLIFICATION M ODULATION OF INGAAS-GAAS INJECTION-LASERS WITH TENSED QUANTUM-DIMENSIONAL ACTIVE LAYER AT FREQUENCIES UP TO 75 HTZ, Pis'ma v Zurnal tehniceskoj fiziki, 19(11), 1993, pp. 53-58
Risultati:
1-16
|