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Results: 1-9 |
Results: 9
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF WIDE-GAP AMORPHOUS HYDROGENATED SILICON PREPARED UNDER HIGH DILUTION WITH HE
Authors: PELANT I LUTEROVA K KNAPEK P KOCKA J STUCHLIK J PORUBA A SURENDAN S VALENTA J DIAN J HONERLAGE B
Citation: I. Pelant et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF WIDE-GAP AMORPHOUS HYDROGENATED SILICON PREPARED UNDER HIGH DILUTION WITH HE, Physica status solidi. a, Applied research, 165(1), 1998, pp. 25-29
ULTRAFAST CARRIER DYNAMICS IN WIDE-GAP AMORPHOUS-SILICON
Authors: KUDRNA J PELANT I SURENDRAN S STUCHLIK J PORUBA A MALY P
Citation: J. Kudrna et al., ULTRAFAST CARRIER DYNAMICS IN WIDE-GAP AMORPHOUS-SILICON, Journal of non-crystalline solids, 238(1-2), 1998, pp. 57-65
OPTICAL-PROPERTIES OF MICROCRYSTALLINE MATERIALS
Authors: VANECEK M PORUBA A REMES Z BECK N NESLADEK M
Citation: M. Vanecek et al., OPTICAL-PROPERTIES OF MICROCRYSTALLINE MATERIALS, Journal of non-crystalline solids, 230, 1998, pp. 967-972
HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY GLOW-DISCHARGE OF SIH4 DILUTED WITH HE - PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN THE VISIBLE REGION
Authors: LUTEROVA K KNAPEK P STUCHLIK J KOCKA J PORUBA A KUDRNA J MALY P VALENTA J DIAN J HONERLAGE B PELANT I
Citation: K. Luterova et al., HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY GLOW-DISCHARGE OF SIH4 DILUTED WITH HE - PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN THE VISIBLE REGION, Journal of non-crystalline solids, 230, 1998, pp. 254-258
THERMAL-DESORPTION SPECTROSCOPY OF HYDROGEN FROM AMORPHOUS HYDROGENATED SILICON
Authors: SALYK O PORUBA A SCHAUER F
Citation: O. Salyk et al., THERMAL-DESORPTION SPECTROSCOPY OF HYDROGEN FROM AMORPHOUS HYDROGENATED SILICON, Chemicke zvesti, 50(4), 1996, pp. 177-182
ENHANCED OPTICAL-ABSORPTION IN MICROCRYSTALLINE SILICON
Authors: BECK N MEIER J FRIC J REMES Z PORUBA A FLUCKIGER R POHL J SHAH A VANECEK M
Citation: N. Beck et al., ENHANCED OPTICAL-ABSORPTION IN MICROCRYSTALLINE SILICON, Journal of non-crystalline solids, 200, 1996, pp. 903-906
PRECISE MEASUREMENT OF THE DEEP DEFECTS AND SURFACE-STATES IN A-SI-H FILMS BY ABSOLUTE CPM
Authors: FEJFAR A PORUBA A VANECEK M KOCKA J
Citation: A. Fejfar et al., PRECISE MEASUREMENT OF THE DEEP DEFECTS AND SURFACE-STATES IN A-SI-H FILMS BY ABSOLUTE CPM, Journal of non-crystalline solids, 200, 1996, pp. 304-308
INFLUENCE OF ANNEALING ABOVE THE DEPOSITION TEMPERATURE ON METASTABILITY IN AMORPHOUS-SILICON
Authors: VANECEK M FRIC J PORUBA A MAHAN AH CRANDALL RS
Citation: M. Vanecek et al., INFLUENCE OF ANNEALING ABOVE THE DEPOSITION TEMPERATURE ON METASTABILITY IN AMORPHOUS-SILICON, Journal of non-crystalline solids, 200, 1996, pp. 478-481
DIRECT MEASUREMENT OF THE DEEP DEFECT DENSITY IN THIN AMORPHOUS-SILICON FILMS WITH THE ABSOLUTE CONSTANT PHOTOCURRENT METHOD
Authors: VANECEK M KOCKA J PORUBA A FEJFAR A
Citation: M. Vanecek et al., DIRECT MEASUREMENT OF THE DEEP DEFECT DENSITY IN THIN AMORPHOUS-SILICON FILMS WITH THE ABSOLUTE CONSTANT PHOTOCURRENT METHOD, Journal of applied physics, 78(10), 1995, pp. 6203-6210
Risultati: 1-9 |