ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

Authors: REDDIX RA POWELL AR

Citation: Ra. Reddix et Ar. Powell, AGE-RELATED-CHANGES IN NEURALLY-EVOKED ION-TRANSPORT ACROSS GUINEA-PIG COLON, Journal of investigative medicine, 46(1), 1998, pp. 3-3

NEURONAL NITRIC-OXIDE SYNTHASE EXPRESSION DECLINES WITH AGE IN MURNE SMALL-INTESTINE

Authors: POWELL AR REDDIX RR

Citation: Ar. Powell et Rr. Reddix, NEURONAL NITRIC-OXIDE SYNTHASE EXPRESSION DECLINES WITH AGE IN MURNE SMALL-INTESTINE, Gastroenterology, 114(4), 1998, pp. 3701-3701

OPTICAL-ABSORPTION IN ALLOYS OF SI, GE, C, AND SN

Authors: ORNER BA HITS D KOLODZEY J GUARIN FJ POWELL AR IYER SS

Citation: Ba. Orner et al., OPTICAL-ABSORPTION IN ALLOYS OF SI, GE, C, AND SN, Journal of applied physics, 79(11), 1996, pp. 8656-8659

GROWTH AND STRAIN SYMMETRIZATION OF SI GE/C/SN QUATERNARY ALLOYS BY MOLECULAR-BEAM EPITAXY/

Authors: GUARIN FJ IYER SS POWELL AR EK BA

Citation: Fj. Guarin et al., GROWTH AND STRAIN SYMMETRIZATION OF SI GE/C/SN QUATERNARY ALLOYS BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 68(25), 1996, pp. 3608-3610

SIGE SI QUANTUM-WELLS WITH ABRUPT INTERFACES GROWN BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION/

Authors: GRUTZMACHER DA SEDGWICK TO SCANDELLA L ZASLAVSKY A POWELL AR IYER SS

Citation: Da. Grutzmacher et al., SIGE SI QUANTUM-WELLS WITH ABRUPT INTERFACES GROWN BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION/, Vacuum, 46(8-10), 1995, pp. 947-950

SILICON-GERMANIUM-CARBON ALLOYS EXTENDING SI BASED HETEROSTRUCTURE ENGINEERING

Authors: POWELL AR IYER SS

Citation: Ar. Powell et Ss. Iyer, SILICON-GERMANIUM-CARBON ALLOYS EXTENDING SI BASED HETEROSTRUCTURE ENGINEERING, JPN J A P 1, 33(4B), 1994, pp. 2388-2391

THERMALLY-INDUCED PRECIPITATION OF SILICON-CARBIDE IN A SEMICONDUCTORMATRIX-APPLICATION TO NANOPARTICLE FABRICATION

Authors: POWELL AR LEGOUES FK IYER SS EK B

Citation: Ar. Powell et al., THERMALLY-INDUCED PRECIPITATION OF SILICON-CARBIDE IN A SEMICONDUCTORMATRIX-APPLICATION TO NANOPARTICLE FABRICATION, JPN J A P 1, 33(4B), 1994, pp. 2392-2394

FORMATION OF BETA-SIC NANOCRYSTALS BY THE RELAXATION OF SI1-YCY RANDOM ALLOY LAYERS

Authors: POWELL AR LEGOUES FK IYER SS

Citation: Ar. Powell et al., FORMATION OF BETA-SIC NANOCRYSTALS BY THE RELAXATION OF SI1-YCY RANDOM ALLOY LAYERS, Applied physics letters, 64(3), 1994, pp. 324-326

NEW APPROACH TO THE GROWTH OF LOW DISLOCATION RELAXED SIGE MATERIAL

Authors: POWELL AR IYER SS LEGOUES FK

Citation: Ar. Powell et al., NEW APPROACH TO THE GROWTH OF LOW DISLOCATION RELAXED SIGE MATERIAL, Applied physics letters, 64(14), 1994, pp. 1856-1858

SI1-X-YGEXCY GROWTH AND PROPERTIES OF THE TERNARY-SYSTEM

Authors: POWELL AR EBERL K EK BA IYER SS

Citation: Ar. Powell et al., SI1-X-YGEXCY GROWTH AND PROPERTIES OF THE TERNARY-SYSTEM, Journal of crystal growth, 127(1-4), 1993, pp. 425-429

CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF MBE-GROWN SI P-N-JUNCTIONS AND SI SIGE SUPERLATTICES/

Authors: YU ET JOHNSON MB KESAN VP POWELL AR HALBOUT JM IYER SS

Citation: Et. Yu et al., CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF MBE-GROWN SI P-N-JUNCTIONS AND SI SIGE SUPERLATTICES/, Journal of crystal growth, 127(1-4), 1993, pp. 435-439

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