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Results:
1-10
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Results: 10
Authors:
Torvik, JT
Pankove, JI
Van Zeghbroeck, B
Citation: Jt. Torvik et al., GaN/SiC heterojunction bipolar transistors, SOL ST ELEC, 44(7), 2000, pp. 1229-1233
Authors:
Pankove, JI
Citation: Ji. Pankove, GaN: from fundamentals to applications, MAT SCI E B, 61-2, 1999, pp. 305-309
Authors:
Zhou, WL
Namavar, F
Colter, PC
Yoganathan, M
Leksono, MW
Pankove, JI
Citation: Wl. Zhou et al., Characterization of GaN grown on SiC on Si/SiO2/Si by metalorganic chemical vapor deposition, J MATER RES, 14(4), 1999, pp. 1171-1174
Authors:
Torvik, JT
Leksono, MW
Pankove, JI
Heinlein, C
Grepstad, JK
Magee, C
Citation: Jt. Torvik et al., Interfacial effects during GaN growth on 6H-SiC, J ELEC MAT, 28(3), 1999, pp. 234-239
Authors:
Qiu, CH
Pankove, JI
Rossington, C
Citation: Ch. Qiu et al., III-V nitride-based X-ray detectors, SEM SEMIMET, 57, 1999, pp. 441-465
Authors:
Torvik, JT
Pankove, JI
Nakamura, S
Grzegory, I
Porowski, S
Citation: Jt. Torvik et al., The effect of threading dislocations, Mg doping, and etching on the spectral responsivity in GaN-based ultraviolet detectors, J APPL PHYS, 86(8), 1999, pp. 4588-4593
Authors:
Torvik, JT
Pankove, JI
Van Zeghbroeck, BJ
Citation: Jt. Torvik et al., Comparison of GaN and 6H-SiC p-i-n photodetectors with excellent ultraviolet sensitivity and selectivity, IEEE DEVICE, 46(7), 1999, pp. 1326-1331
Authors:
Pankove, JI
Torvik, JT
Qiu, CH
Grzegory, I
Porowski, S
Quigley, P
Martin, B
Citation: Ji. Pankove et al., Molecular doping of gallium nitride, APPL PHYS L, 74(3), 1999, pp. 416-418
Authors:
Pankove, JI
Moustakas, TD
Citation: Ji. Pankove et Td. Moustakas, Introduction: A historical survey of research on gallium nitride, SEM SEMIMET, 50, 1998, pp. 1-10
Authors:
Doverspike, K
Pankove, JI
Citation: K. Doverspike et Ji. Pankove, Doping in the III-nitrides, SEM SEMIMET, 50, 1998, pp. 259-277
Risultati:
1-10
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