Authors: Parfeniev, RV Farbshtein, II Yakimov, SV Shalimov, VP Turchaninov, AM

Citation: Rv. Parfeniev et al., Solidification of anisotropic semiconductor tellurium: Samples in microgravity and their properties, ACT ASTRONA, 48(2-3), 2001, pp. 87-91

Authors: Parfeniev, RV Regel, LL

Citation: Rv. Parfeniev et Ll. Regel, Gravity application to anisotropic semiconductor materials: From high- to microgravity conditions, ACT ASTRONA, 48(2-3), 2001, pp. 163-168

Authors: Moiseev, KD Berezovets, VA Mikhailova, MP Nizhankovskii, VI Parfeniev, RV Yakovlev, YP

Citation: Kd. Moiseev et al., Quantum magnetotransport at a type II broken-gap single heterointerface, SURF SCI, 482, 2001, pp. 1083-1089

Authors: Nemov, SA Parfeniev, RV Shamshur, DV Konstantinov, PP Safonchik, MO Popov, DI Stepien-Damm, J Kaczorowski, D

Citation: Sa. Nemov et al., Observation of superconducting and structural phase transitions in Sn1-zGezTe : In solid solutions, PHYSICA C, 333(1-2), 2000, pp. 31-40

Authors: Andreev, AG Chernyaev, AV Egorov, SV Parfeniev, RV Zabrodskii, AG

Citation: Ag. Andreev et al., Hysteresis of the variable range hopping magnetoresistance in the moderately compensated p-type Ge, PHYS ST S-B, 218(1), 2000, pp. 165-168

Authors: Mikhailova, MP Moiseev, KD Berezovets, YA Parfeniev, RV Bazhenov, NL Smirnov, VA Yakovlev, YP

Citation: Mp. Mikhailova et al., Interface-induced phenomena in type II antimonide-arsenide heterostructures, IEE P-OPTO, 145(5), 1998, pp. 268-274