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Authors:
Nam, IH
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Park, BG
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Lee, SW
Kang, MS
Kim, YW
Suh, KP
Lee, WS
Citation: Ih. Nam et al., Nitrogen profile effects on the growth rate of gate oxides grown on nitrogen-implanted silicon, J VAC SCI B, 19(1), 2001, pp. 299-304
Citation: Jt. Suh et al., Hypertrophic non-union of the first rib causing thoracic outlet syndrome :A case report, J KOR MED S, 16(5), 2001, pp. 673-676
Citation: Bg. Park et al., Robust receding horizon control of discrete-time Markovian jump uncertain systems, IEICE T FUN, E84A(9), 2001, pp. 2272-2279
Citation: Jd. Lee et al., Co silicide formation on single crystal silicon field emitter arrays by using electrical stress, J KOR PHYS, 38(3), 2001, pp. 203-206
Citation: Bg. Park et al., Material characterisation and mechanical properties of Al2O3-Al metal matrix composites, J MATER SCI, 36(10), 2001, pp. 2417-2426
Authors:
Nam, IH
Sim, JS
Hong, SI
Park, BG
Lee, JD
Lee, SW
Kang, MS
Kim, YW
Suh, KP
Lee, WS
Citation: Ih. Nam et al., Ultrathin gate oxide grown on nitrogen-implanted silicon for deep submicron CMOS transistors, IEEE DEVICE, 48(10), 2001, pp. 2310-2316
Citation: Jd. Lee et al., Silicide application on gated single-crystal, polycrystalline and amorphous silicon FEAs - Part I: Mo silicide, IEEE DEVICE, 48(1), 2001, pp. 149-154
Citation: Jd. Lee et al., Silicide application on gated single-crystal, polycrystalline and amorphous silicon FEAs - Part II: Co silicide, IEEE DEVICE, 48(1), 2001, pp. 155-160
Authors:
Kim, DH
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Sim, JS
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Lee, JD
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Citation: Dh. Kim et al., Single-electron transistor based on a silicon-on-insulator quantum wire fabricated by a side-wall patterning method, APPL PHYS L, 79(23), 2001, pp. 3812-3814
Authors:
Lee, WG
Park, BG
Chang, YK
Chang, HN
Lee, JS
Park, SC
Citation: Wg. Lee et al., Continuous ethanol production from concentrated wood hydrolysates in an internal membrane-filtration bioreactor, BIOTECH PR, 16(2), 2000, pp. 302-304
Citation: Dh. Kim et al., Room temperature coulomb oscillation of a single electron switch with an electrically formed quantum dot and its modeling, JPN J A P 1, 39(4B), 2000, pp. 2329-2333
Authors:
Park, HB
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Park, WC
Lee, JH
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Kim, KC
Park, SJ
Chang, IT
Song, YJ
Chang, ES
Leu, JW
Cho, SH
Jung, KH
Kang, YJ
Son, GS
Moon, BI
Kim, OY
Choi, SY
Jun, SY
Park, SH
Park, BG
Kim, JS
Park, JH
Citation: Hb. Park et al., Clinical characteristics of Korean breast cancer patients in 1998, J KOR MED S, 15(5), 2000, pp. 569-579
Authors:
Chang, HN
Moon, RK
Park, BG
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Choi, DW
Lee, WG
Song, SL
Ahn, YH
Citation: Hn. Chang et al., Simulation of sequential batch reactor (SBR) operation for simultaneous removal of nitrogen and phosphorus, BIOPROC ENG, 23(5), 2000, pp. 513-521
Authors:
Hwang, IS
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Park, BG
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Citation: Is. Hwang et al., The concept of proliferation-resistant, environment-friendly, accident-tolerant, continual and economical reactor (PEACER), PROG NUCL E, 37(1-4), 2000, pp. 217-222
Authors:
Yoon, TS
Kwon, JY
Lee, DH
Kim, KB
Min, SH
Chae, DH
Kim, DH
Lee, JD
Park, BG
Lee, HJ
Citation: Ts. Yoon et al., High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2, J APPL PHYS, 87(5), 2000, pp. 2449-2453
Citation: Yt. Lee et al., Threshold voltage reduction model for buried channel PMOSFETs using quasi-2-D Poisson equation, IEEE DEVICE, 47(12), 2000, pp. 2326-2333