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Citation: P. Sitarek et al., Photoreflectance investigations of GaN epitaxial layers, MAT SCI E B, 82(1-3), 2001, pp. 209-211

Authors: Paszkiewicz, R Paszkiewicz, B Korbutowicz, R Kozlowski, J Tlaczala, M Bryja, L Kudrawiec, R Misiewicz, J

Citation: R. Paszkiewicz et al., MOVPE GaN grown on alternative substrates, CRYST RES T, 36(8-10), 2001, pp. 971-977

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Citation: B. Sciana et al., Epitaxial growth and characterisation of silicon delta-doped GaAs, AlAs and AlxGa1-xAs, CRYST RES T, 36(8-10), 2001, pp. 1145-1154

Authors: Paszkiewicz, B

Citation: B. Paszkiewicz, Impedance spectroscopy analysis of AlGaN/GaN HFET structures, J CRYST GR, 230(3-4), 2001, pp. 590-595

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Citation: S. Kochowski et al., Some effects of (NH4)(2)S-x treatment of n-GaAs surface on electrical characteristics of metal-SiO2-GaAs structures, VACUUM, 57(2), 2000, pp. 157-162

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Citation: M. Ciorga et al., The influence of MOCVD process scheme on the optical properties of GaN layers, MAT SCI E B, 59(1-3), 1999, pp. 16-19