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Results: 1-8 |
Results: 8
Kelvin probe measurements of microcrystalline silicon on a nanometer scaleusing SFM
Authors: Breymesser, A Schlosser, V Peiro, D Voz, C Bertomeu, J Andreu, J Summhammer, J
Citation: A. Breymesser et al., Kelvin probe measurements of microcrystalline silicon on a nanometer scaleusing SFM, SOL EN MAT, 66(1-4), 2001, pp. 171-177
Microdoping compensation of microcrystalline silicon obtained by hot-wire chemical vapour deposition
Authors: Voz, C Peiro, D Fonrodona, M Soler, D Bertomeu, J Andreu, J
Citation: C. Voz et al., Microdoping compensation of microcrystalline silicon obtained by hot-wire chemical vapour deposition, SOL EN MAT, 63(3), 2000, pp. 237-246
Optimisation of doped microcrystalline silicon films deposited at very lowtemperatures by hot-wire CVD
Authors: Voz, C Peiro, D Bertomeu, J Soler, D Fonrodona, M Andreu, J
Citation: C. Voz et al., Optimisation of doped microcrystalline silicon films deposited at very lowtemperatures by hot-wire CVD, MAT SCI E B, 69, 2000, pp. 278-283
Microcrystalline silicon thin film transistors obtained by hot-wire CVD
Authors: Puigdollers, J Dosev, D Orpella, A Vox, C Peiro, D Bertomeu, J Marsal, LF Pallares, J Andreu, J Alcubilla, R
Citation: J. Puigdollers et al., Microcrystalline silicon thin film transistors obtained by hot-wire CVD, MAT SCI E B, 69, 2000, pp. 526-529
Structure of microcrystalline silicon films deposited at very low temperatures by hot-wire CVD
Authors: Peiro, D Bertomeu, J Voz, C Fonrodona, M Soler, D Andreu, J
Citation: D. Peiro et al., Structure of microcrystalline silicon films deposited at very low temperatures by hot-wire CVD, MAT SCI E B, 69, 2000, pp. 536-541
Thin film transistors obtained by hot wire CVD
Authors: Puigdollers, J Orpella, A Dosev, D Voz, C Peiro, D Pallares, J Marsal, LF Bertomeu, J Andreu, J Alcubilla, R
Citation: J. Puigdollers et al., Thin film transistors obtained by hot wire CVD, J NON-CRYST, 266, 2000, pp. 1304-1309
Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition
Authors: Niikura, C Guillet, J Brenot, R Equer, B Bouree, JE Voz, C Peiro, D Asensi, JM Bertomeu, J Andreu, J
Citation: C. Niikura et al., Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition, J NON-CRYST, 266, 2000, pp. 385-390
Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD
Authors: Stoger, M Breymesser, A Schlosser, V Ramadori, M Plunger, V Peiro, D Voz, C Bertomeu, J Nelhiebel, M Schattschneider, P Andreu, J
Citation: M. Stoger et al., Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD, PHYSICA B, 274, 1999, pp. 540-543
Risultati: 1-8 |