Authors:
Pejnefors, J
Zhang, SL
Radamsson, HH
Ostling, M
Citation: J. Pejnefors et al., Effects of growth kinetics and surface emissivity on chemical vapor deposition of silicon in a lamp-heated single-wafer reactor, EL SOLID ST, 4(11), 2001, pp. G98-G100
Authors:
Winzell, T
Pejnefors, J
Elfman, M
Ostling, M
Whitlow, HJ
Citation: T. Winzell et al., Scanning mu-RBS characterisation of local loading effects of non-selectively epitaxially grown SiGe thin films, NUCL INST B, 179(1), 2001, pp. 121-125
Authors:
Grahn, JV
Fosshaug, H
Jargelius, M
Jonsson, P
Linder, M
Malm, BG
Mohadjeri, B
Pejnefors, J
Radamson, HH
Sanden, M
Wang, YB
Landgren, G
Ostling, M
Citation: Jv. Grahn et al., A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget, SOL ST ELEC, 44(3), 2000, pp. 549-554
Citation: J. Pejnefors et al., Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure, J APPL PHYS, 88(3), 2000, pp. 1655-1663
Authors:
Kaplan, W
Pejnefors, J
Linder, M
Sanden, M
Karlin, TE
Malm, G
Zhang, SL
Grahn, JV
Ostling, M
Citation: W. Kaplan et al., A simplified high-speed bipolar process with Ti salicide metallization: Implementation of in situ p-doped polysilicon emitter, PHYS SCR, T79, 1999, pp. 318-321
Authors:
Pejnefors, J
Zhang, SL
Grahn, JV
Ostling, M
Persson, L
Hult, M
Citation: J. Pejnefors et al., Hydrogen in undoped and heavily in situ phosphorus doped silicon films deposited using disilane and phosphine, J APPL PHYS, 86(4), 1999, pp. 1970-1973