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Citation: T. Winzell et al., Scanning mu-RBS characterisation of local loading effects of non-selectively epitaxially grown SiGe thin films, NUCL INST B, 179(1), 2001, pp. 121-125

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Authors: Pejnefors, J Zhang, SL Radamson, HH Grahn, JV Ostling, M

Citation: J. Pejnefors et al., Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure, J APPL PHYS, 88(3), 2000, pp. 1655-1663

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Citation: W. Kaplan et al., A simplified high-speed bipolar process with Ti salicide metallization: Implementation of in situ p-doped polysilicon emitter, PHYS SCR, T79, 1999, pp. 318-321

Authors: Pejnefors, J Zhang, SL Grahn, JV Ostling, M Persson, L Hult, M

Citation: J. Pejnefors et al., Hydrogen in undoped and heavily in situ phosphorus doped silicon films deposited using disilane and phosphine, J APPL PHYS, 86(4), 1999, pp. 1970-1973