Authors: Affolder, A Azzi-Bacchetta, P Bacchetta, N Barker, G Barbaro-Galtieri, A Basti, A Bedeschi, F Bisello, D Blusk, S Caskey, WP Chiarelli, G Connolly, A Demina, R Ely, R Field, R Garcia-Sciveres, M Giolo, K Goldstein, D Goldstein, J Grim, GP Guerzoni, M Haas, R Haber, C Hara, K Hartmann, F Heiss, A Hill, C Hrycyk, M Incandela, J Kato, Y Knoblauch, D Kruse, M Lander, RL Lei, CM Leonardi, GL Leone, S Miyazaki, Y Moggi, A Muller, T Munar-Ara, A Okusawa, T Palmonari, F Paulini, M Piacentino, G Pellett, DE Raffaelli, F Roederer, F Saltzberg, D Shimojima, M Stuart, D Suzuki, H Takano, T Takikawa, K Tanaka, M Taniguchi, Y Tipton, P Turini, N Volobouev, I Wenzel, H Wilkes, TD Yao, W Yoshida, T Zetti, F Zucchelli, S

Citation: A. Affolder et al., Intermediate silicon layers detector for the CDF experiment, NUCL INST A, 453(1-2), 2000, pp. 84-88

Authors: Grim, GP Bishai, M Gay, C Hill, C Nahn, S Pellett, DE Pope, G Shepard, PF Slaughter, AJ Wester, WC

Citation: Gp. Grim et al., Measurement of SEU cross sections in the CDF SVX3 ASIC using 63 MeV protons, NUCL INST A, 447(1-2), 2000, pp. 160-166

Authors: Pellett, DE Liu, ST

Citation: De. Pellett et St. Liu, Performance of Honeywell RICMOS-IV SOI transistors after irradiation to 27Mrad(Si) by 63.3 MeV protons, NUCL PH B-P, 78, 1999, pp. 708-712