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Results:
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Results: 8
Authors:
Gierak, J
Mailly, D
Faini, G
Pelouard, JL
Denk, P
Pardo, F
Marzin, JY
Septier, A
Schmid, G
Ferre, J
Hydman, R
Chappert, C
Flicstein, J
Gayral, B
Gerard, JM
Citation: J. Gierak et al., Nano-fabrication with focused ion beams, MICROEL ENG, 57-8, 2001, pp. 865-875
Authors:
Denk, P
Pelouard, JL
Citation: P. Denk et Jl. Pelouard, Temperature-dependent resistivity anomaly in doped AlAs/GaAs lateral superlattices: Evidence for Fermi-liquid behavior - art. no. 041304, PHYS REV B, 6304(4), 2001, pp. 1304
Authors:
Collin, S
Pardo, F
Teissier, R
Pelouard, JL
Citation: S. Collin et al., Strong discontinuities in the complex photonic band structure of transmission metallic gratings - art. no. 033107, PHYS REV B, 6303(3), 2001, pp. 3107
Authors:
Matine, N
Dvorak, MW
Pelouard, JL
Pardo, F
Bolognesi, CR
Citation: N. Matine et al., Fabrication and characterization of InP heterojunction bipolar transistorswith emitter edges parallel to [001] and [010] crystal orientations, JPN J A P 1, 38(2B), 1999, pp. 1200-1203
Authors:
Gautier-Levine, A
Teissier, R
Nezzari, A
Rao, E
Decobert, J
Pelouard, JL
Scavennec, A
Citation: A. Gautier-levine et al., Impact ionization in InAlAs/InP single channel heterojunction field effecttransistors, JPN J A P 2, 38(5B), 1999, pp. L560-L562
Authors:
Pelouard, JL
Citation: Jl. Pelouard, JNMO'97 - Chantilly, France, January 29-31 1997 - Preface, J PHYS IV, 9(P2), 1999, pp. V-V
Authors:
Gayral, B
Gerard, JM
Lemaitre, A
Dupuis, C
Manin, L
Pelouard, JL
Citation: B. Gayral et al., High-Q wet-etched GaAs microdisks containing InAs quantum boxes, APPL PHYS L, 75(13), 1999, pp. 1908-1910
Authors:
Teissier, R
Sicault, D
Goujon, A
Pelouard, JL
Pardo, F
Mollot, F
Citation: R. Teissier et al., Radiative emission rate modulation in semiconductor heterostructures coupled to a mirror: A probe of ballistic electron mean free path, APPL PHYS L, 75(1), 1999, pp. 103-105
Risultati:
1-8
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