Authors:
Ganichev, SD
Ziemann, E
Yassievich, IN
Perel, VI
Prettl, W
Citation: Sd. Ganichev et al., Characterization of deep impurities in semiconductors by terahertz tunneling ionization, MAT SC S PR, 4(1-3), 2001, pp. 281-284
Authors:
Ziemann, E
Ganichev, SD
Prettl, W
Yassievich, IN
Perel, VI
Citation: E. Ziemann et al., Characterization of deep impurities in semiconductors by terahertz tunneling ionization, J APPL PHYS, 87(8), 2000, pp. 3843-3849
Authors:
Moskalenko, AS
Ganichev, SD
Perel, VI
Yassievich, IN
Citation: As. Moskalenko et al., Magnetic field effect on tunnel ionization of deep impurities by far-infrared radiation, PHYSICA B, 274, 1999, pp. 1007-1010
Citation: Vi. Perel et Bi. Shklovskii, Screening of a macroion by multivalent ions: a new boundary condition for the Poisson-Boltzmann equation and charge inversion, PHYSICA A, 274(3-4), 1999, pp. 446-453
Authors:
Alferov, ZI
Gulyaev, YV
Keldysh, LM
Kuznetsov, FA
Prokhorov, AM
Perel, VI
Veselago, VG
Gurevich, AG
Prochukhan, VD
Nikiforov, KG
Ivanov-Omskii, VI
Citation: Zi. Alferov et al., In memory of Sergei Ivanovich Radautsan, SEMICONDUCT, 32(11), 1998, pp. 1253-1254