Authors: Calvert, TM Lambkin, JD Corbett, B Phillips, AF Crean, GM

Citation: Tm. Calvert et al., Fabrication of low-threshold red VCSELs, MAT SC S PR, 3(5-6), 2000, pp. 517-521

Authors: Silver, M Phillips, AF Adams, AR Greene, PD Collar, AJ

Citation: M. Silver et al., Design and ASE characteristics of 1550-nm polarization-insensitive semiconductor optical amplifiers containing tensile and compressive wells, IEEE J Q EL, 36(1), 2000, pp. 118-122

Authors: Phillips, AF Sweeney, SJ Adams, AR Thijs, PJA

Citation: Af. Phillips et al., The temperature dependence of 1.3-and 1.5-mu m compressively strained InGaAs(P) MQW semiconductor lasers, IEEE S T QU, 5(3), 1999, pp. 401-412

Authors: Higashi, T Sweeney, SJ Phillips, AF Adams, AR O'Reilly, EP Uchida, T Fujii, T

Citation: T. Higashi et al., Experimental analysis of temperature dependence in 1.3-mu m AlGaInAs-InP strained MQW lasers, IEEE S T QU, 5(3), 1999, pp. 413-419

Authors: Higashi, T Sweeney, SJ Phillips, AF Adams, AR O'Reilly, EP Uchida, T Fujii, T

Citation: T. Higashi et al., Observation of reduced nonradiative current in 1.3-mu m AlGaInAs-InP strained MQW lasers, IEEE PHOTON, 11(4), 1999, pp. 409-411

Authors: Phillips, AF Sweeney, SJ Adams, AR Thijs, PJA

Citation: Af. Phillips et al., The hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers, PHYS ST S-B, 211(1), 1999, pp. 513-518