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Results:
1-7
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Results: 7
Authors:
Runge, K
Zampardi, PJ
Pierson, RL
Penny, J
Citation: K. Runge et al., 16GHz low-power 1 : 4 prescalar fabricated in 1.0 mu m BiFET technology, ELECTR LETT, 37(6), 2001, pp. 389-390
Authors:
Welser, RE
Pan, N
Lutz, CR
Vu, DP
Zampardi, PJ
Pierson, RL
McDermott, BT
Citation: Re. Welser et al., High performance Al0.35Ga0.65As/GaAs HBT's, IEEE ELEC D, 21(5), 2000, pp. 196-199
Authors:
Rosenthal, PA
Yu, ET
Pierson, RL
Zampardi, PJ
Citation: Pa. Rosenthal et al., Characterization of AlxGa1-xAs/GaAs heterojunction bipolar transistor structures using cross-sectional scanning force microscopy, J APPL PHYS, 87(4), 2000, pp. 1937-1942
Authors:
Zhang, SM
Niu, GF
Cressler, JD
Mathew, SJ
Gogineni, U
Clark, SD
Zampardi, P
Pierson, RL
Citation: Sm. Zhang et al., A comparison of the effects of gamma irradiation on SiGeHBT and GaAsHBT technologies, IEEE NUCL S, 47(6), 2000, pp. 2521-2527
Authors:
Bell, LD
Smith, RP
McDermott, BT
Gertner, ER
Pittman, R
Pierson, RL
Sullivan, GJ
Citation: Ld. Bell et al., Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy, APPL PHYS L, 76(13), 2000, pp. 1725-1727
Authors:
Zampardi, PJ
Runge, K
Pierson, RL
Higgins, JA
Yu, R
McDermott, BT
Pan, N
Citation: Pj. Zampardi et al., Heterostructure-based high-speed/high-frequency electronic circuit applications, SOL ST ELEC, 43(8), 1999, pp. 1633-1643
Authors:
Chen, PF
Hsin, YMT
Welty, RJ
Asbeck, PM
Pierson, RL
Zampardi, PJ
Ho, WJ
Ho, MCV
Chang, MF
Citation: Pf. Chen et al., Application of GaInP/GaAs DHBT's to power amplifiers for wireless communications, IEEE MICR T, 47(8), 1999, pp. 1433-1438
Risultati:
1-7
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