Authors: Liliental-Weber, Z Benamara, M Washburn, J Domagala, JZ Bak-Misiuk, J Piner, EL Roberts, JC Bedair, SM

Citation: Z. Liliental-weber et al., Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies, J ELEC MAT, 30(4), 2001, pp. 439-444

Authors: Readinger, ED Luther, BP Mohney, SE Piner, EL

Citation: Ed. Readinger et al., Environmental aging of Schottky contacts to n-AlGaN, J APPL PHYS, 89(12), 2001, pp. 7983-7987

Authors: Piner, EL Keogh, DM Flynn, JS Redwing, JM

Citation: El. Piner et al., AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties, MRS I J N S, 5, 2000, pp. NIL_299-NIL_303

Authors: Vescan, A Dietrich, R Wieszt, A Schurr, A Leier, H Piner, EL Redwing, JM

Citation: A. Vescan et al., AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20GHz, ELECTR LETT, 36(14), 2000, pp. 1234-1236

Authors: Joshkin, VA Parker, CA Bedair, SM Muth, JF Shmagin, IK Kolbas, RM Piner, EL Molnar, RJ

Citation: Va. Joshkin et al., Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy, J APPL PHYS, 86(1), 1999, pp. 281-288

Authors: Behbehani, MK Piner, EL Liu, SX El-Masry, NA Bedair, SM

Citation: Mk. Behbehani et al., Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition, APPL PHYS L, 75(15), 1999, pp. 2202-2204