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Results:
1-8
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Results: 8
Authors:
Platen, J
Selle, B
Sieber, I
Brehme, S
Zeimer, U
Fuhs, W
Citation: J. Platen et al., Low-temperature epitaxial growth of Si by electron cyclotron resonance chemical vapor deposition, THIN SOL FI, 381(1), 2001, pp. 22-30
Authors:
Jacobi, K
Platen, J
Setzer, C
Citation: K. Jacobi et al., Structure and surface core-level shifts of GaAs surfaces prepared by molecular-beam epitaxy, PHYS ST S-B, 218(2), 2000, pp. 329-364
Authors:
Jacobi, K
Geelhaar, L
Marquez, J
Platen, J
Setzer, C
Citation: K. Jacobi et al., The morphology of high-index GaAs surfaces, APPL SURF S, 166(1-4), 2000, pp. 173-178
Authors:
Geng, P
Marquez, J
Geelhaar, L
Platen, J
Setzer, C
Jacobi, K
Citation: P. Geng et al., A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces, REV SCI INS, 71(2), 2000, pp. 504-508
Authors:
Jacobi, K
Platen, J
Setzer, C
Marquez, J
Geelhaar, L
Meyne, C
Richter, W
Kley, A
Ruggerone, P
Scheffler, M
Citation: K. Jacobi et al., Morphology, surface core-level shifts and surface energy of the faceted GaAs(112)A and(112)B surfaces, SURF SCI, 439(1-3), 1999, pp. 59-72
Authors:
Setzer, C
Platen, J
Ranke, W
Jacobi, K
Citation: C. Setzer et al., Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and ((113)over-bar)B surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing, SURF SCI, 419(2-3), 1999, pp. 291-302
Authors:
Platen, J
Kley, A
Setzer, C
Jacobi, K
Ruggerone, P
Scheffler, M
Citation: J. Platen et al., The importance of high-index surfaces for the morphology of GaAs quantum dots, J APPL PHYS, 85(7), 1999, pp. 3597-3601
Authors:
Pristovsek, M
Menhal, H
Wehnert, T
Zettler, JT
Schmidtling, T
Esser, N
Richter, W
Setzer, C
Platen, J
Jacobi, K
Citation: M. Pristovsek et al., Reconstructions of the GaAs (1 1 3) surface, J CRYST GR, 195(1-4), 1998, pp. 1-5
Risultati:
1-8
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