Authors: Polyakov, VM Schwierz, F

Citation: Vm. Polyakov et F. Schwierz, Influence of electron mobility modeling on DC I-V characteristics of WZ-GaN MESFET, IEEE DEVICE, 48(3), 2001, pp. 512-516

Authors: Sloboshanin, S Tautz, FS Polyakov, VM Starke, U Usikov, AS Ber, BJ Schaefer, JA

Citation: S. Sloboshanin et al., Structural, vibrational and electronic properties of faceted GaN (000(1)over-bar) surfaces, SURF SCI, 428, 1999, pp. 250-256

Authors: Polyakov, VM Elbe, A Schaefer, JA

Citation: Vm. Polyakov et al., Post-annealing-induced free-carrier compensation in shallow-buried delta layers of GaAs(100), SURF SCI, 420(1), 1999, pp. 43-52

Authors: Polyakov, VM Balster, T Sloboshanin, S Tautz, FS Ibach, H Schaefer, JA

Citation: Vm. Polyakov et al., Surface state-derived electronic transitions of SiC(001), SURF SCI, 420(1), 1999, pp. 87-94

Authors: Polyakov, VM Tautz, FS Sloboshanin, S Schaefer, JA Usikov, AS Ber, BJ

Citation: Vm. Polyakov et al., Surface plasmons at MOCVD-grown GaN(000(1)over-bar), SEMIC SCI T, 13(12), 1998, pp. 1396-1400