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Results:
1-14
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Results: 14
Authors:
Viennois, R
Taliercio, T
Potin, V
Errebbahi, A
Gil, B
Charar, S
Haidoux, A
Tedenac, JC
Citation: R. Viennois et al., Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical properties, MAT SCI E B, 82(1-3), 2001, pp. 45-49
Authors:
Potin, V
Gil, B
Charar, S
Ruterana, P
Nouet, G
Citation: V. Potin et al., HREM study of basal stacking faults in GaN layers grown over sapphire substrate, MAT SCI E B, 82(1-3), 2001, pp. 114-116
Authors:
Ruterana, P
Potin, V
Barbaray, B
Nouet, G
Citation: P. Ruterana et al., Growth defects in GaN layers on top of (0001) sapphire: a geometrical investigation of the misfit effect, PHIL MAG A, 80(4), 2000, pp. 937-954
Authors:
Potin, V
Ruterana, P
Nouet, G
Pond, RC
Morkoc, H
Citation: V. Potin et al., Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle tohigh-angle grain boundaries, PHYS REV B, 61(8), 2000, pp. 5587-5599
Authors:
Ruterana, P
Chen, J
Potin, V
Nouet, G
Citation: P. Ruterana et al., The multiple atomic configuration and formation mechanisms of extended defects in wurtzite GaN, J PHYS-COND, 12(49), 2000, pp. 10185-10194
Authors:
Potin, V
Ruterana, P
Nouet, G
Citation: V. Potin et al., HREM study of stacking faults in GaN layers grown over sapphire substrate, J PHYS-COND, 12(49), 2000, pp. 10301-10306
Authors:
Aichoune, N
Potin, V
Ruterana, P
Hairie, A
Nouet, G
Paumier, E
Citation: N. Aichoune et al., An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN, COMP MAT SC, 17(2-4), 2000, pp. 380-383
Authors:
Charar, S
Tedenac, JC
Potin, V
Viennois, R
Laire, O
Fau, C
Liautard, B
Citation: S. Charar et al., Preparation of Bi2Te3 films by hot-wall epitaxy and characterization of p-n junction, PHYS ST S-A, 182(2), 2000, pp. 669-678
Authors:
Potin, V
Nouet, G
Ruterana, P
Citation: V. Potin et al., The {10(1)over-bar0} inversion domains in GaN/sapphire layers: an electronmicroscopy analysis of the atomic structure of the boundaries, PHIL MAG A, 79(12), 1999, pp. 2899-2919
Authors:
Barbaray, B
Potin, V
Ruterana, P
Nouet, G
Citation: B. Barbaray et al., Inversion domains generated at substrate steps in GaN/(0001) Al2O3 layers, DIAM RELAT, 8(2-5), 1999, pp. 314-318
Authors:
Potin, V
Ruterana, P
Nouet, G
Citation: V. Potin et al., TEM study of {10(1)over-bar0} inversion domains in GaN layers grown on {0001} sapphire substrate, MAT SCI E B, 59(1-3), 1999, pp. 173-176
Authors:
Ruterana, P
Potin, V
Nouet, G
Bonnet, R
Loubradou, M
Citation: P. Ruterana et al., Investigation of the atomic structure of the pure edge and a plus c threading dislocations in gan layers grown by MBE, MAT SCI E B, 59(1-3), 1999, pp. 177-181
Authors:
Potin, V
Nouet, G
Ruterana, P
Pond, RC
Citation: V. Potin et al., The atomic structure of threading dislocations from low-angle to high-angle grain boundaries in GaN/sapphire epitaxial layers, PHYS ST S-B, 216(1), 1999, pp. 645-648
Authors:
Potin, V
Nouet, G
Ruterana, P
Citation: V. Potin et al., Evidence for multiple atomic structure for the {10(1)over-bar-0} inversiondomain boundaries in GaN layers, APPL PHYS L, 74(7), 1999, pp. 947-949
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