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Results:
1-7
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Results: 7
Authors:
Durand, O
Berger, V
Bisaro, R
Bouchier, A
De Rossi, A
Marcadet, X
Prevot, I
Citation: O. Durand et al., Determination of thicknesses and interface roughnesses of GaAs-based and InAs/AlSb-based heterostructures by X-ray reflectometry, MAT SC S PR, 4(1-3), 2001, pp. 327-330
Authors:
Prevot, I
Marcadet, X
Durand, O
Bisaro, R
Julien, FH
Citation: I. Prevot et al., Optical and structural investigation of InAs/AlSb/GaSb heterostructures, OPT MATER, 17(1-2), 2001, pp. 193-195
Authors:
Prevot, I
Vinter, B
Julien, FH
Fossard, F
Marcadet, X
Citation: I. Prevot et al., Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices - art. no. 195318, PHYS REV B, 6419(19), 2001, pp. 5318
Authors:
Prevot, I
Marcadet, X
Durand, O
Bisaro, R
Bouchier, A
Julien, FH
Citation: I. Prevot et al., Characterisation and optimisation of MBE grown arsenide/antimonide interfaces, J CRYST GR, 227, 2001, pp. 566-570
Authors:
Marcadet, X
Rakovska, A
Prevot, I
Glastre, G
Vinter, B
Berger, V
Citation: X. Marcadet et al., MBE growth of room-temperature InAsSb mid-infrared detectors, J CRYST GR, 227, 2001, pp. 609-613
Authors:
Becker, C
Prevot, I
Marcadet, X
Vinter, B
Sirtori, C
Citation: C. Becker et al., InAs/AlSb quantum-cascade light-emitting devices in the 3-5 mu m wavelength region, APPL PHYS L, 78(8), 2001, pp. 1029-1031
Authors:
Sagnes, I
Prevot, I
Patriarche, G
Le Roux, G
Gayral, B
Lemaitre, A
Gerard, JM
Citation: I. Sagnes et al., High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 524-529
Risultati:
1-7
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