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Results: 1-8 |
Results: 8
Laser-induced changes in the photoelectric properties of MnxHg1-xTe crystals
Authors: Gnatyuk, VA Mozol', PO Prokopenko, IV Smirnov, OB Vlasenko, OI
Citation: Va. Gnatyuk et al., Laser-induced changes in the photoelectric properties of MnxHg1-xTe crystals, INFR PHYS T, 42(2), 2001, pp. 69-75
The effect of dislocations formed during growth on the structure and photoluminescence of i-n(-)-n-n(+)-GaAs epilayers and on the related microwave transistors parameters
Authors: Lisitsa, MP Motsnyi, FV Motsnyi, VF Prokopenko, IV
Citation: Mp. Lisitsa et al., The effect of dislocations formed during growth on the structure and photoluminescence of i-n(-)-n-n(+)-GaAs epilayers and on the related microwave transistors parameters, SEMICONDUCT, 35(4), 2001, pp. 477-480
Wire-like submicron crystal as a natural heterostructure
Authors: Klimovskaya, AI Prokopenko, IV Ostrovskii, IP
Citation: Ai. Klimovskaya et al., Wire-like submicron crystal as a natural heterostructure, J PHYS-COND, 13(26), 2001, pp. 5923-5930
Calculation of two-dimensional maps of diffuse scattering by a real crystal with microdefects and comparison of results obtained from three-crystal diffractometry
Authors: Klad'ko, VP Datsenko, LI Bak-Misiuk, J Olikhovskii, SI Machulin, VF Prokopenko, IV Molodkin, VB Maksimenko, ZV
Citation: Vp. Klad'Ko et al., Calculation of two-dimensional maps of diffuse scattering by a real crystal with microdefects and comparison of results obtained from three-crystal diffractometry, J PHYS D, 34(10A), 2001, pp. A87-A92
Luminescent ZnS : Cu films prepared by chemical methods
Authors: Svechnikov, SV Zav'yalova, LV Roshchina, NN Rodionov, VE Khomchenko, VS Berezhinskii, LI Prokopenko, IV Litvin, PM Litvin, OS Kolomzarov, YV Tsyrkunov, YA
Citation: Sv. Svechnikov et al., Luminescent ZnS : Cu films prepared by chemical methods, SEMICONDUCT, 34(10), 2000, pp. 1128-1132
Relaxation processes in Au-TiB2/GaAs structures under short-term thermal annealing
Authors: Kryshtab, TG Lytvyn, OS Lytvyn, PM Prokopenko, IV
Citation: Tg. Kryshtab et al., Relaxation processes in Au-TiB2/GaAs structures under short-term thermal annealing, APPL SURF S, 166(1-4), 2000, pp. 130-136
On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts
Authors: Dmitruk, NL Ermolovich, IB Konakova, RV Lytvyn, OS Lytvyn, PM Milenin, VV Prokopenko, IV Venger, EF Voitsikhovskyi, DI Boltovets, NS Ivanov, VN
Citation: Nl. Dmitruk et al., On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts, APPL SURF S, 166(1-4), 2000, pp. 520-525
Effect of gamma-radiation of Co-60 on electrophysical properties of GaAs Schottky field transistors
Authors: Konakova, RV Milenin, VV Solovev, EA Statov, VA Stovpovoi, MA Rengevich, AE Prokopenko, IV Tarielashvili, GT
Citation: Rv. Konakova et al., Effect of gamma-radiation of Co-60 on electrophysical properties of GaAs Schottky field transistors, IVUZ RADIO, 43(5-6), 2000, pp. A45-A52
Risultati: 1-8 |