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Results: 1-9 |
Results: 9
Relativistic gigawatt BWT microwave pulse duration increased upon treatingthe slow-wave structure surface with a low-energy high-current electron beam
Authors: Batrakov, AV Karlik, KV Kitsanov, SA Klimov, AI Konovalov, IN Korovin, SD Mesyats, GA Ozur, GE Pegel', IV Polevin, SD Proskurovskii, DI Sukhov, MY
Citation: Av. Batrakov et al., Relativistic gigawatt BWT microwave pulse duration increased upon treatingthe slow-wave structure surface with a low-energy high-current electron beam, TECH PHYS L, 27(2), 2001, pp. 150-152
Current-voltage characteristics of a reflex discharge with a hollow cathode and self-heating electrode
Authors: Kagadei, VA Kozyrev, AV Osipov, IV Proskurovskii, DI
Citation: Va. Kagadei et al., Current-voltage characteristics of a reflex discharge with a hollow cathode and self-heating electrode, TECH PHYS, 46(3), 2001, pp. 292-298
The effect of reflected beam electrons on the distribution of energy deposited in a target
Authors: Bespalov, VI Markov, AB Proskurovskii, DI Ryzhov, VV Turchanovskii, IY
Citation: Vi. Bespalov et al., The effect of reflected beam electrons on the distribution of energy deposited in a target, TECH PHYS L, 26(9), 2000, pp. 794-796
The effect of hydrogenation on the photoconductivity of ion-doped gallium arsenide structures
Authors: Kagadei, VA Lilenko, YV Shirokova, LS Proskurovskii, DI
Citation: Va. Kagadei et al., The effect of hydrogenation on the photoconductivity of ion-doped gallium arsenide structures, TECH PHYS L, 26(4), 2000, pp. 269-271
A comparative study of the atomic hydrogen penetration into thin vanadium films and silicon oxide-gallium arsenide structures
Authors: Bozhkov, VG Kagadei, VA Proskurovskii, DI Romas', LM
Citation: Vg. Bozhkov et al., A comparative study of the atomic hydrogen penetration into thin vanadium films and silicon oxide-gallium arsenide structures, TECH PHYS L, 26(10), 2000, pp. 926-928
Suppression of parasitic backgating by hydrogenation of ion-doped gallium arsenide structures
Authors: Kagadei, VA Lilenko, YV Shirokova, LS Proskurovskii, DI
Citation: Va. Kagadei et al., Suppression of parasitic backgating by hydrogenation of ion-doped gallium arsenide structures, TECH PHYS L, 25(7), 1999, pp. 522-523
Nature of the "ring effect" in intense field emission
Authors: Batrakov, AV Proskurovskii, DI
Citation: Av. Batrakov et Di. Proskurovskii, Nature of the "ring effect" in intense field emission, TECH PHYS L, 25(6), 1999, pp. 444-447
Limitation of the field emission current density by the space charge of the emitted electrons
Authors: Batrakov, AV Pegel', IV Proskurovskii, DI
Citation: Av. Batrakov et al., Limitation of the field emission current density by the space charge of the emitted electrons, TECH PHYS L, 25(6), 1999, pp. 454-455
Bulk changes in the microhardness of a solid WC-110G13 steel alloy exposedto a low-energy, high-current electron beam
Authors: Gnyusov, SF Ivanov, YF Proskurovskii, DI Rotshtein, VP
Citation: Sf. Gnyusov et al., Bulk changes in the microhardness of a solid WC-110G13 steel alloy exposedto a low-energy, high-current electron beam, TECH PHYS L, 25(10), 1999, pp. 825-827
Risultati: 1-9 |