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Citation: T. Prutskij et al., Study of AlGaAs laser heterostructures with multiquantum well active region grown by low temperature liquid phase epitaxy, CRYST RES T, 36(4-5), 2001, pp. 395-401

Authors: Ilinskii, A Prutskij, T Silva-Andrade, F Chavez, F Shadrin, E Khrustalkova, L

Citation: A. Ilinskii et al., Characterization of doped sillenites by electrooptic and spectral methods, MOD PHY L B, 15(17-19), 2001, pp. 749-751

Authors: Silva-Andrade, F Ilinskii, A Chavez, F Prutskij, T Tenorio, F Bravo-Garcia, Y Pena-Sierra, R

Citation: F. Silva-andrade et al., Growth and characterization of GaAs p-n junctions obtained by the CSVT technique using atomic hydrogen, MOD PHY L B, 15(17-19), 2001, pp. 752-755

Authors: Reich, I Diaz, P Prutskij, T Mendoza, J Vargas, H Marin, E

Citation: I. Reich et al., Photoacoustic determination of the recombination velocity at the AlGaAs/GaAs heterostructure interface, J APPL PHYS, 86(11), 1999, pp. 6222-6229