Authors: Prutskij, TA Arencibia, PD Mintairov, A Merz, J Kosel, TH

Citation: Ta. Prutskij et al., Ordered versus disordered InGaP layers grown by liquid phase epitaxy, MOD PHY L B, 15(17-19), 2001, pp. 651-654

Authors: Ilinskii, AV Silva-Andrade, F Chavez, F Banuelos, F Prutskij, TA

Citation: Av. Ilinskii et al., Use of the longitudinal Pockels effect for measuring electroconductivity and photoconductivity of high-resistivity impure silenite crystals, REV MEX FIS, 47(3), 2001, pp. 286-290

Authors: Zamora, E Diaz, P Jimenez-Sandoval, S Gonzalez-Rana, C Prutskij, TA Mishurnii, V Merkulov, A

Citation: E. Zamora et al., Micro-Raman studies of AlxGa1-xP/GaP graded structures, PHYS ST S-B, 220(1), 2000, pp. 141-146

Authors: Prutskij, TA Silva-Andrade, F Ilinskii, AV Chavez, F

Citation: Ta. Prutskij et al., Near and far fields of AlGaAs laser structures with additional fields in the optical cavity obtained by low temperature liquid phase epitaxy, REV MEX FIS, 45(1), 1999, pp. 14-20

Authors: Ilinskii, AV Prutskij, TA Silva-Andrade, F Chavez, F

Citation: Av. Ilinskii et al., Schottky barrier visualization in a high-resistance electro-optical semiconductor, REV MEX FIS, 45(1), 1999, pp. 97-107