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Results: 1-17 |
Results: 17
Nonlinear spectroscopy of homoepitaxial GaN
Authors: Schweitzer, C Frohlich, D Reimann, K Prystawko, P Leszczynski, M Suski, T
Citation: C. Schweitzer et al., Nonlinear spectroscopy of homoepitaxial GaN, MAT SCI E B, 82(1-3), 2001, pp. 156-158
III-N ternary epi-layers grown on the GaN bulk crystals
Authors: Leszczynski, M Prystawko, P Czernecki, R Lehnert, J Suski, T Perlin, P Wisniewski, P Grzegory, I Nowak, G Porowski, S Albrecht, M
Citation: M. Leszczynski et al., III-N ternary epi-layers grown on the GaN bulk crystals, J CRYST GR, 231(3), 2001, pp. 352-356
Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN
Authors: Jursenas, S Kurilcik, N Kurilcik, G Zukauskas, A Prystawko, P Leszcynski, M Suski, T Perlin, P Grzegory, I Porowski, S
Citation: S. Jursenas et al., Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN, APPL PHYS L, 78(24), 2001, pp. 3776-3778
MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices
Authors: Kirchner, C Schwegler, V Eberhard, F Kamp, M Ebeling, KJ Prystawko, P Leszczynski, M Grzegory, I Porowski, S
Citation: C. Kirchner et al., MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices, PROG CRYST, 41(1-4), 2000, pp. 57-83
Microwave plasma etching of GaN in nitrogen atmosphere
Authors: Frayssinet, E Prystawko, P Leszczynski, M Domagala, J Knap, W Robert, JL
Citation: E. Frayssinet et al., Microwave plasma etching of GaN in nitrogen atmosphere, PHYS ST S-A, 181(1), 2000, pp. 151-155
Infrared studies on GaN single crystals and homoepitaxial layers
Authors: Frayssinet, E Knap, W Prystawko, P Leszczynski, M Grzegory, I Suski, T Beaumont, B Gibart, P
Citation: E. Frayssinet et al., Infrared studies on GaN single crystals and homoepitaxial layers, J CRYST GR, 218(2-4), 2000, pp. 161-166
Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers
Authors: Neu, G Teisseire, M Frayssinet, E Knap, W Sadowski, ML Witowski, AM Pakula, K Leszczynski, M Prystawko, P
Citation: G. Neu et al., Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers, APPL PHYS L, 77(9), 2000, pp. 1348-1350
GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates
Authors: Khan, MA Yang, JW Knap, W Frayssinet, E Hu, X Simin, G Prystawko, P Leszczynski, M Grzegory, I Porowski, S Gaska, R Shur, MS Beaumont, B Teisseire, M Neu, G
Citation: Ma. Khan et al., GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates, APPL PHYS L, 76(25), 2000, pp. 3807-3809
Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire
Authors: Leszczynski, M Prystawko, P Suski, T Lucznik, B Domagala, J Bak-Misiuk, J Stonert, A Turos, A Langer, R Barski, A
Citation: M. Leszczynski et al., Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire, J ALLOY COM, 286(1-2), 1999, pp. 271-275
Strain relaxation of AlxGa1-xN epitaxial layers on GaN and SiC substrates
Authors: Domagala, J Leszczynski, M Prystawko, P Suski, T Langer, R Barski, A Bremser, M
Citation: J. Domagala et al., Strain relaxation of AlxGa1-xN epitaxial layers on GaN and SiC substrates, J ALLOY COM, 286(1-2), 1999, pp. 284-288
Infrared reflectivity and transport investigations of GaN single crystals and homoepitaxial layers
Authors: Frayssinet, E Knap, W Robert, JL Prystawko, P Leszczynski, M Suski, T Wisniewski, P Litwin-Staszewska, E Porowski, S Beaumont, B Gibart, P
Citation: E. Frayssinet et al., Infrared reflectivity and transport investigations of GaN single crystals and homoepitaxial layers, PHYS ST S-B, 216(1), 1999, pp. 91-94
Changes in the microstructure of GaN layers on sapphire upon annealing at high pressure
Authors: Domagala, J Leszczynski, M Suski, T Jun, J Prystawko, P Teisseyre, H
Citation: J. Domagala et al., Changes in the microstructure of GaN layers on sapphire upon annealing at high pressure, THIN SOL FI, 350(1-2), 1999, pp. 295-299
Epitaxy of ternary nitrides on GaN single crystals
Authors: Prystawko, P Leszczynski, M Sliwinski, A Teisseyre, H Suski, T Bockowski, M Porowski, S Domagala, J Kirchner, C Pelzmann, A Schauler, M Kamp, M
Citation: P. Prystawko et al., Epitaxy of ternary nitrides on GaN single crystals, J CRYST GR, 199, 1999, pp. 1061-1065
GaN homoepitaxial layers grown by metalorganic chemical vapor deposition
Authors: Leszczynski, M Beaumont, B Frayssinet, E Knap, W Prystawko, P Suski, T Grzegory, I Porowski, S
Citation: M. Leszczynski et al., GaN homoepitaxial layers grown by metalorganic chemical vapor deposition, APPL PHYS L, 75(9), 1999, pp. 1276-1278
Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology
Authors: Kirchner, C Schwegler, V Eberhard, F Kamp, M Ebeling, KJ Kornitzer, K Ebner, T Thonke, K Sauer, R Prystawko, P Leszczynski, M Grzegory, I Porowski, S
Citation: C. Kirchner et al., Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology, APPL PHYS L, 75(8), 1999, pp. 1098-1100
Dry etching of GaN substrates for high-quality homoepitaxy
Authors: Schauler, M Eberhard, F Kirchner, C Schwegler, V Pelzmann, A Kamp, M Ebeling, KJ Bertram, F Riemann, T Christen, J Prystawko, P Leszczynski, M Grzegory, I Porowski, S
Citation: M. Schauler et al., Dry etching of GaN substrates for high-quality homoepitaxy, APPL PHYS L, 74(8), 1999, pp. 1123-1125
Doping of homoepitaxial GaN layers
Authors: Prystawko, P Leszczynski, M Beaumont, B Gibart, P Frayssinet, E Knap, W Wisniewski, P Bockowski, M Suski, T Porowski, S
Citation: P. Prystawko et al., Doping of homoepitaxial GaN layers, PHYS ST S-B, 210(2), 1998, pp. 437-443
Risultati: 1-17 |